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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
V10PM6-M3/I RECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division	2,890	-	RFQ	Ficha técnica	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	1650pF @ 4V, 1MHz	-	800 µA @ 60 V	60 V	10A	-40°C ~ 175°C	640 mV @ 10 A
AS3PM-M3/86A DIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division	3,993	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	37pF @ 4V, 1MHz	1.2 µs	10 µA @ 1000 V	1000 V	2.1A (DC)	-55°C ~ 175°C	920 mV @ 1.5 A
RM 11AV1 DIODE GEN PURP 600V 1.2A AXIAL Sanken	3,296	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 600 V	600 V	1.2A	-40°C ~ 150°C	920 mV @ 1.5 A
CDBA140LL-G DIODE SCHOTTKY 40V 1A DO214AC Comchip Technology	2,502	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Not For New Designs	Surface Mount	-	-	1 mA @ 40 V	40 V	1A	-20°C ~ 80°C	340 mV @ 1 A
CMH04(TE12L,Q,M) DIODE GEN PURP 200V 1A MFLAT Toshiba Semiconductor and Storage	2,619	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	980 mV @ 1 A
BYT54B-TAP DIODE AVALANCHE 100V 1.25A SOD57 Vishay General Semiconductor - Diodes Division	3,590	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 100 V	100 V	1.25A	-55°C ~ 175°C	1.5 V @ 1 A
SGL41-50HE3/97 DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division	2,091	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	500 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
AS3PK-M3/86A DIODE AVALANCHE 800V 2.1A TO277A Vishay General Semiconductor - Diodes Division	3,689	-	RFQ	Ficha técnica	Tape & Reel (TR)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	37pF @ 4V, 1MHz	1.2 µs	10 µA @ 800 V	800 V	2.1A (DC)	-55°C ~ 175°C	920 mV @ 1.5 A
RO 2V1 DIODE GEN PURP 400V 1.2A AXIAL Sanken	2,168	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 400 V	400 V	1.2A	-40°C ~ 150°C	920 mV @ 1.5 A
ACGRBT301-HF DIODE GEN PURP 200V 3A DO214AA Comchip Technology	3,776	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Last Time Buy	Surface Mount	23pF @ 4V, 1MHz	-	5 µA @ 200 V	200 V	3A	-65°C ~ 175°C	1 V @ 3 A
SBR1A40S3Q-7 DIODE SBR 40V 1A SOD323 Diodes Incorporated	2,375	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Super Barrier	Active	Surface Mount	55pF @ 4V, 1MHz	-	100 µA @ 40 V	40 V	1A	-65°C ~ 150°C	550 mV @ 1 A
BYV12-TAP DIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division	2,548	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	300 ns	5 µA @ 100 V	100 V	1.5A	-55°C ~ 175°C	1.5 V @ 1 A
SGL41-60HE3/97 DIODE SCHOTTKY 60V 1A DO213AB Vishay General Semiconductor - Diodes Division	3,613	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	500 µA @ 60 V	60 V	1A	-55°C ~ 150°C	700 mV @ 1 A
AS4PG-M3/86A DIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division	3,420	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	60pF @ 4V, 1MHz	1.8 µs	10 µA @ 400 V	400 V	2.4A (DC)	-55°C ~ 175°C	962 mV @ 2 A
RS 1AV1 DIODE GEN PURP 600V 700MA AXIAL Sanken	2,423	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 600 V	600 V	700mA	-40°C ~ 150°C	2.5 V @ 800 mA
S4J V6G DIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation	3,275	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	100 µA @ 600 V	600 V	4A	-55°C ~ 150°C	-
SS1P3LHM3/85A DIODE SCHOTTKY 30V 1.5A DO220AA Vishay General Semiconductor - Diodes Division	3,104	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101, eSMP®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	110pF @ 4V, 1MHz	-	200 µA @ 30 V	30 V	1.5A	-55°C ~ 150°C	450 mV @ 1 A
BYV37-TAP DIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division	3,698	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	300 ns	5 µA @ 800 V	800 V	2A	-55°C ~ 175°C	1.1 V @ 1 A
SGL41-50HE3/96 DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division	3,177	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	80pF @ 4V, 1MHz	-	500 µA @ 50 V	50 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES3AHE3_A/I DIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division	2,793	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	45pF @ 4V, 1MHz	30 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	900 mV @ 3 A