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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GL34DST Rect, 200V, 0.5A DComponents |
3,261 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 200 V | 200 V | 500mA | -50°C ~ 175°C | 1.2 V @ 500 mA | |
|
US2AUF Rect, 50V, 2.00A, 50ns DComponents |
2,164 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 50 V | 50 V | 2A | -50°C ~ 150°C | 1 V @ 2 A | |
|
56DN06ELEMEVMITPRXPSA1DIODE E-EUPEC-0 Infineon Technologies |
3,037 | - |
RFQ |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 100 mA @ 600 V | 600 V | 6400A | 180°C (Max) | 1.15 V @ 10000 A | ||
|
MBR1060HDIODE SCHOTTKY onsemi |
2,694 | - |
RFQ |
Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 800 mV @ 10 A | |
|
RL1N4001GDIODE GLASS 1A 50V A-405 Rectron USA |
2,359 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
S120UTRSCHOTTKY 200V SOD-123FL SMC Diode Solutions |
3,714 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 28pF @ 4V, 1MHz | - | 50 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 900 mV @ 1 A | ||
|
BY880-600St Rectifier, 600V, 8A DComponents |
3,494 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 600 V | 600 V | 8A | -50°C ~ 175°C | 1.1 V @ 8 A | |
|
UF5402UF Rect, 200V, 3.00A, 50ns DComponents |
2,328 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -50°C ~ 175°C | 1 V @ 3 A | |
|
|
D1030N22TPRXOSA1DIODE BG-D5726K-1 Infineon Technologies |
3,157 | - |
RFQ |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 40 mA @ 2200 V | 2200 V | 1030A | 160°C (Max) | 1.11 V @ 1000 A | ||
|
MBR120LSFT1HDIODE SCHOTTKY onsemi |
2,801 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | ||
|
1N5400DIODE GEN PURP 1000V 3A DO-201AD Rectron USA |
2,536 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 200 nA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
AL1BST Rect, 100V, 1A DComponents |
2,274 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 1.5 µs | 3 µA @ 100 V | 100 V | 1A | -50°C ~ 175°C | 1.2 V @ 1 A | |
|
|
MURB860DIODE GEN PURP 600V 8A D2PAK SMC Diode Solutions |
3,764 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 2.2 V @ 8 A | ||
|
USL1BUF Rect, 100V, 1.00A, 50ns DComponents |
3,997 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 1 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
BYT52B-TAPDIODE AVALANCHE 100V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 100 V | 100 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
SK86C V6GDIODE SCHOTTKY 8A 60V DO-214AB Taiwan Semiconductor Corporation |
3,972 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | - | |
|
AS4PJ-M3/87ADIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,403 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
EM2ADIODE GEN PURP 600V 1.2A AXIAL Sanken |
2,100 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |
|
|
EGL34GHE3_A/HDIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,290 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
|
|
BYT54A-TAPDIODE AVALANCHE 50V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
2,152 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 50 V | 50 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A |
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