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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5807URSDIODE GEN PURP 50V 3A BPKG Microchip Technology |
2,732 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
|
S3410RECTIFIER Microchip Technology |
3,535 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 100 V | 100 V | - | -65°C ~ 200°C | - | |
|
JAN1N5287-1/TRCURRENT REGULATOR Microchip Technology |
3,476 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
1N1614RSTANDARD RECTIFIER Microchip Technology |
2,774 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
B360A-M3/5ATDIODE SCHOTTKY 60V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,282 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A | |
|
1N3070-1ZENER DIODE Microchip Technology |
3,444 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 50 ns | - | 175 V | 100mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
1N5415DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
2,896 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 1 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
|
JANTXV1N5809URSDIODE GEN PURP 100V 3A BPKG Microchip Technology |
2,150 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
|
S34100RECTIFIER Microchip Technology |
2,063 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 1000 V | 1000 V | - | -65°C ~ 200°C | - | |
|
|
JAN1N5291-1/TRCURRENT REGULATOR Microchip Technology |
3,863 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
1N1615STANDARD RECTIFIER Microchip Technology |
3,126 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
VS-12FL60S02DIODE GEN PURP 600V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,041 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 50 µA @ 600 V | 600 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
JANTXV1N5811URSDIODE GEN PURP 150V 3A BPKG Microchip Technology |
2,825 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
|
S34120RECTIFIER Microchip Technology |
2,005 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 1200 V | 1200 V | 45A | -65°C ~ 200°C | - | |
|
BAS21JFDIODE GEN PURP 300V 250MA SC90 Nexperia USA Inc. |
3,288 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 250 V | 300 V | 250mA (DC) | 150°C (Max) | 1.1 V @ 100 mA |
|
|
JAN1N5302-1/TRCURRENT REGULATOR Microchip Technology |
3,550 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
BYG10M-M3/TR3DIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
3,595 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
1N1615ASTANDARD RECTIFIER Microchip Technology |
3,736 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JAN1N4946/TRRECTIFIER UFR,FRR Microchip Technology |
2,028 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/360 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
MBR75100RDIODE SCHOTTKY REV 100V DO5 GeneSiC Semiconductor |
2,935 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 5 mA @ 20 V | 100 V | 75A | -65°C ~ 150°C | 840 mV @ 75 A |
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