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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N1616STANDARD RECTIFIER Microchip Technology |
3,210 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
JAN1N5711-1DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
3,049 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/444 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 2pF @ 0V, 1MHz | - | 200 nA @ 70 V | 70 V | 33mA | -65°C ~ 150°C | 1 V @ 15 mA |
|
|
MBR7530RDIODE SCHOTTKY REV 30V DO5 GeneSiC Semiconductor |
3,612 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1 mA @ 30 V | 30 V | 75A | -55°C ~ 150°C | 750 mV @ 75 A | |
|
|
S3420RECTIFIER Microchip Technology |
2,915 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 10 µA @ 200 V | 200 V | 45A | -65°C ~ 200°C | - | |
|
JAN1N5286-1/TRCURRENT REGULATOR Microchip Technology |
3,738 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
CUS521,H3FDIODE SCHOTTKY 30V 200MA USC Toshiba Semiconductor and Storage |
2,382 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 26pF @ 0V, 1MHz | - | 30 µA @ 30 V | 30 V | 200mA | 125°C (Max) | 500 mV @ 200 mA | |
|
VS-HFA30PB120HN3DIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,947 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 170 ns | 40 µA @ 1200 V | 1200 V | 30A | -55°C ~ 150°C | 4.1 V @ 30 A |
|
|
BYG20JHM3_A/IDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,189 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.4 V @ 1.5 A |
|
S1GLR2G1A, 400V, GLASS PASSIVATED SMF R Taiwan Semiconductor Corporation |
3,798 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N1616ASTANDARD RECTIFIER Microchip Technology |
2,519 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
BYG21KHM3_A/HDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,423 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
|
JAN1N3612/TRSTD RECTIFIER Microchip Technology |
2,753 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/228 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 300 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
PMEG3002ESFYLDIODE SCHOT 30V 200MA DSN0603-2 Nexperia USA Inc. |
2,720 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 21pF @ 1V, 1MHz | 1.42 ns | 9 µA @ 30 V | 30 V | 200mA | 150°C (Max) | 535 mV @ 200 mA | |
|
|
MBR7535RDIODE SCHOTTKY REV 35V DO5 GeneSiC Semiconductor |
2,207 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1 mA @ 35 V | 35 V | 75A | -55°C ~ 150°C | 750 mV @ 75 A | |
|
|
BYG21KHM3_A/IDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
|
BAV101 L0GDIODE GP 250V 200MA MINIMELF Taiwan Semiconductor Corporation |
3,493 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | - | 100 nA @ 200 V | 250 V | 200mA | -65°C ~ 200°C | 1 V @ 100 mA | |
|
|
BYG21MHM3_A/HDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,472 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
|
|
BAV103 L0GDIODE GP 250V 200MA MINIMELF Taiwan Semiconductor Corporation |
3,882 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | - | 100 nA @ 200 V | 250 V | 200mA | -65°C ~ 200°C | 1 V @ 100 mA | |
|
|
BYG21MHM3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,996 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
|
SDM02M30CLP3-7BSCHOTTKY DIODE X2-DFN1006-3 Diodes Incorporated |
2,331 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 3.3pF @ 5V, 1MHz | 2 ns | 400 µA @ 30 V | 30 V | 200mA | -55°C ~ 150°C | 700 mV @ 100 mA |
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