Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-70HFLR40S05

VS-70HFLR40S05

DIODE GEN PURP 400V 70A DO203AB

Vishay General Semiconductor - Diodes Division
3,319 -

RFQ

VS-70HFLR40S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 70A -40°C ~ 125°C 1.85 V @ 219.8 A
1N1128A

1N1128A

STANDARD RECTIFIER

Microchip Technology
2,710 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 5 µA @ 600 V 600 V - -65°C ~ 150°C 2.2 V @ 10 A
VS-12FL40S05

VS-12FL40S05

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division
3,594 -

RFQ

VS-12FL40S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 400 V 400 V 12A -65°C ~ 150°C 1.4 V @ 12 A
MBR7580R

MBR7580R

DIODE SCHOTTKY REV 80V DO5

GeneSiC Semiconductor
3,841 -

RFQ

MBR7580R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky, Reverse Polarity Active Chassis, Stud Mount - - 1 mA @ 80 V 80 V 75A -55°C ~ 150°C 840 mV @ 75 A
JANTX1N5311UR-1

JANTX1N5311UR-1

DIODE CURRENT REG 100V

Microchip Technology
2,422 -

RFQ

JANTX1N5311UR-1

Ficha técnica

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Surface Mount - - - - - - -
JAN1N5307-1/TR

JAN1N5307-1/TR

CURRENT REGULATOR

Microchip Technology
2,586 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
1N6662/TR

1N6662/TR

STD RECTIFIER

Microchip Technology
3,666 -

RFQ

1N6662/TR

Ficha técnica

Tape & Reel (TR) Military, MIL-PRF- 19500/587 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 400 V 400 V 500mA -65°C ~ 175°C 1 V @ 400 mA
1N1124

1N1124

STANDARD RECTIFIER

Microchip Technology
2,571 -

RFQ

1N1124

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
VS-12FLR40S05

VS-12FLR40S05

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division
3,859 -

RFQ

VS-12FLR40S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 50 µA @ 400 V 400 V 12A -65°C ~ 150°C 1.4 V @ 12 A
JAN1N5309UR-1/TR

JAN1N5309UR-1/TR

CURRENT REGULATOR

Microchip Technology
3,581 -

RFQ

JAN1N5309UR-1/TR

Ficha técnica

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Surface Mount - - - - - - -
JANTX1N5312UR-1

JANTX1N5312UR-1

CURRENT REGULATOR DIODE

Microchip Technology
2,326 -

RFQ

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Surface Mount - - - - - - -
JAN1N5308-1/TR

JAN1N5308-1/TR

CURRENT REGULATOR

Microchip Technology
2,888 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
VS-88HF80

VS-88HF80

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division
3,462 -

RFQ

VS-88HF80

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 800 V 85A -65°C ~ 180°C 1.2 V @ 267 A
1N1124A

1N1124A

STANDARD RECTIFIER

Microchip Technology
2,646 -

RFQ

1N1124A

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
EGP10G-E3/54

EGP10G-E3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,629 -

RFQ

EGP10G-E3/54

Ficha técnica

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.25 V @ 1 A
CDBB3200-G

CDBB3200-G

DIODE SCHOTTKY 200V 3A DO214AA

Comchip Technology
2,453 -

RFQ

CDBB3200-G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Not For New Designs Surface Mount 250pF @ 4V, 1MHz - 500 µA @ 200 V 200 V 3A (DC) -50°C ~ 175°C 900 mV @ 3 A
ES3FBHM4G

ES3FBHM4G

DIODE GEN PURP 300V 3A DO214AA

Taiwan Semiconductor Corporation
2,377 -

RFQ

ES3FBHM4G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 41pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.13 V @ 3 A
ES3GBHM4G

ES3GBHM4G

DIODE GEN PURP 400V 3A DO214AA

Taiwan Semiconductor Corporation
2,525 -

RFQ

ES3GBHM4G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 41pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.13 V @ 3 A
1N5818 R0G

1N5818 R0G

DIODE SCHOTTKY 30V 1A DO204AL

Taiwan Semiconductor Corporation
3,493 -

RFQ

1N5818 R0G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 30 V 30 V 1A -55°C ~ 125°C 550 mV @ 1 A
ES3JBHM4G

ES3JBHM4G

DIODE GEN PURP 600V 3A DO214AA

Taiwan Semiconductor Corporation
3,893 -

RFQ

ES3JBHM4G

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 34pF @ 4V, 1MHz 35 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.45 V @ 3 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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