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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5819 R0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
2,986 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 600 mV @ 1 A | |
|
UG4A-M3/73DIODE GEN PURP 50V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,250 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
SR104 R0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
3,291 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
UG4B-M3/73DIODE GEN PURP 100V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,707 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 15 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
BAT42W-HE3-18DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,660 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 650 mV @ 50 mA |
|
|
UG4C-M3/73DIODE GEN PURP 150V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,181 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
BAT43W-HE3-18DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,923 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 450 mV @ 15 mA |
|
|
UG4D-M3/73DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,074 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
|
BAT42W-HE3-08DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,602 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 650 mV @ 50 mA |
|
MUR140-TDIODE GEN PURP 400V 1A DO41 Diodes Incorporated |
2,785 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
1N5819 BK TIN/LEADDIODE SCHOTTKY 40V 1A DO41 Central Semiconductor Corp |
3,120 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 600 mV @ 1 A | |
|
BYG24D-E3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
3,246 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A | |
|
|
1N5819 TR TIN/LEADDIODE SCHOTTKY 40V 1A DO41 Central Semiconductor Corp |
2,869 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 600 mV @ 1 A | |
|
|
BYG24G-E3/TR3DIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division |
2,607 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A | |
|
NSVBAS16W1T1GSS SC88 SWITCHING DIODE onsemi |
2,429 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 3 ns | 1 µA @ 100 V | 100 V | 200mA (DC) | 150°C (Max) | 1.2 V @ 100 mA |
|
|
BYG24J-E3/TR3DIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division |
2,323 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A | |
|
SS13 M2GDIODE SCHOTTKY 30V 1A DO214AC Taiwan Semiconductor Corporation |
2,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
RS1AL RVGDIODE GEN PURP 50V 800MA SUB SMA Taiwan Semiconductor Corporation |
2,680 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS110 M2GDIODE SCHOTTKY 100V 1A DO214AC Taiwan Semiconductor Corporation |
2,408 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 125°C | 800 mV @ 1 A | |
|
|
RS1BL RUGDIODE GEN PURP 100V 800MA SUBSMA Taiwan Semiconductor Corporation |
2,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA |
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