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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N1126ASTANDARD RECTIFIER Microchip Technology |
3,218 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
1N6638DIODE GEN PURPOSE WEC |
3,637 | - |
RFQ |
Ficha técnica |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4.5 ns | 500 nA @ 125 V | 125 V | 300mA | -65°C ~ 200°C | 1.1 V @ 200 mA | |
|
|
JANTX1N6078DIODE GEN PURP 150V 1.3A AXIAL Microchip Technology |
3,435 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 150 V | 150 V | 1.3A | -65°C ~ 155°C | 1.76 V @ 18.8 A |
|
|
1N1353STANDARD RECTIFIER Microchip Technology |
3,522 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
JAN1N5299-1/TRCURRENT REGULATOR Microchip Technology |
3,305 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
PCFFS4065AFDIODE SCHOTTKY 650V 40A DIE onsemi |
3,957 | - |
RFQ |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 1989pf @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 40A | -55°C ~ 175°C | 1.75 V @ 40 A | ||
|
RS1JL RUGDIODE GEN PURP 600V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,940 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
BAS170WS-G3-18DIODE SCHOTTKY 70V 70MA SOD323 Vishay General Semiconductor - Diodes Division |
2,634 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 10 µA @ 70 V | 70 V | 70mA | -55°C ~ 125°C | 1 V @ 15 mA | |
|
|
RS1KL RUGDIODE GEN PURP 800V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,352 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
BAS170WS-G3-08DIODE SCHOTTKY 70V 70MA SOD323 Vishay General Semiconductor - Diodes Division |
2,856 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 10 µA @ 70 V | 70 V | 70mA | -55°C ~ 125°C | 1 V @ 15 mA | |
|
|
RSFDL RUGDIODE GEN PURP 200V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,224 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
SMMSD914T3GDIODE GEN PURP 100V 200MA SOD123 onsemi |
310,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | -55°C ~ 150°C | 1 V @ 10 mA | |
|
|
RSFJL RUGDIODE GEN PURP 600V 500MA SUBSMA Taiwan Semiconductor Corporation |
2,554 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA | |
|
BAS286-GS18DIODE SCHOTTKY 50V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
2,095 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 8pF @ 1V, 1MHz | - | 5 µA @ 40 V | 50 V | 200mA | -65°C ~ 150°C | 900 mV @ 100 mA |
|
SS520B-HFDIODE SCHOTTKY 5A 200V SMB Comchip Technology |
2,815 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 4V, 1MHz | - | 300 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
BAS383-TR3DIODE SCHOTTKY 60V 30MA MICROMLF Vishay General Semiconductor - Diodes Division |
3,788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 1.6pF @ 1V, 1MHz | - | 200 nA @ 60 V | 60 V | 30mA | 125°C (Max) | 1 V @ 15 mA |
|
|
SS515B-HFDIODE SCHOTTKY 5A 150V SMB Comchip Technology |
2,496 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 300pF @ 4V, 1MHz | - | 300 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
BAS86-M-18DIODE SCHOTTKY 50V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
3,117 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 8pF @ 1V, 1MHz | 5 ns | 5 µA @ 40 V | 50 V | 200mA | 125°C (Max) | 900 mV @ 100 mA |
|
SDURF560ADIODE GEN PURP 600V 5A ITO220AC SMC Diode Solutions |
2,097 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.7 V @ 5 A | |
|
|
BAS86-M-08DIODE SCHOTTKY 50V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
3,133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 8pF @ 1V, 1MHz | 5 ns | 5 µA @ 40 V | 50 V | 200mA | 125°C (Max) | 900 mV @ 100 mA |
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