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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR809HDIODE SCHOTTKY 8A 90V DO-201AD Taiwan Semiconductor Corporation |
3,815 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 8A (DC) | -55°C ~ 150°C | 920 mV @ 8 A | |
|
|
SR509HDIODE SCHOTTKY 5A 90V DO-201AD Taiwan Semiconductor Corporation |
3,479 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 5A (DC) | -55°C ~ 150°C | 850 mV @ 5 A | |
|
SK53C R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,038 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | ||
|
FR203GDIODE FAST REC 2A 200V DO-15 Taiwan Semiconductor Corporation |
2,023 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | ||
|
UG8JHDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,655 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 30 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 150°C | 2.9 V @ 8 A | |
|
|
HS5M R7DIODE GENERAL PURPOSE DO214AB Taiwan Semiconductor Corporation |
2,839 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 5A (DC) | -55°C ~ 150°C | 1.7 V @ 5 A | ||
|
|
UF4001DIODE GEN PURP 50V 1A DO-41 Taiwan Semiconductor Corporation |
2,463 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
|
MBR16100HDIODE SCHOTTKY 100V 16A TO220 Taiwan Semiconductor Corporation |
2,741 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A (DC) | -55°C ~ 150°C | 850 mV @ 16 A | |
|
|
ES3C R6DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,427 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
|
HER103GDIODE GEN PURP 1A 200V DO-41 Taiwan Semiconductor Corporation |
3,658 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
|
UGA8120DIODE GEN PURP 8A TO220AC Taiwan Semiconductor Corporation |
2,302 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 70 ns | 5 µA @ 1200 V | 1200 V | 8A (DC) | -55°C ~ 175°C | 2.8 V @ 8 A | ||
|
|
ESH3D R6DIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
3,145 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | ||
|
|
SRAF520HDIODE SCHOTTKY 20V 5A ITO220AC Taiwan Semiconductor Corporation |
2,806 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 5A (DC) | -55°C ~ 125°C | 550 mV @ 5 A | |
|
|
FR153GDIODE FAST REC 1.5A 200V DO-15 Taiwan Semiconductor Corporation |
3,955 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 150°C | 1.3 V @ 1.5 A | ||
|
ES2AAHR3GDIODE GEN PURP 50V 2A DO214AC Taiwan Semiconductor Corporation |
3,717 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 25pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SK59C R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,550 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 90 V | 90 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | ||
|
|
HER101GDIODE GEN PURP 1A 50V DO-41 Taiwan Semiconductor Corporation |
2,234 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1 V @ 1 A | ||
|
|
SR303DIODE SCHOTTKY 3A 30V DO-201AD Taiwan Semiconductor Corporation |
3,478 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 3A (DC) | -55°C ~ 125°C | 550 mV @ 3 A | ||
|
|
S5M R6GDIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
2,881 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
|
SFA1006GDIODE GEN PURP 400V 10A TO220AC Taiwan Semiconductor Corporation |
2,173 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A (DC) | -55°C ~ 150°C | 1.3 V @ 10 A |
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