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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR202HDIODE SCHOTTKY 2A 10V TO220AB Taiwan Semiconductor Corporation |
2,741 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 2A (DC) | -55°C ~ 125°C | 550 mV @ 2 A | |
|
|
SFT11GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,346 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | ||
|
2CZ4006 RHGDIODE STANDARD RECOVERY SOD-123 Taiwan Semiconductor Corporation |
2,486 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | ||
|
FR301GDIODE FAST REC 3A 50V DO-201AD Taiwan Semiconductor Corporation |
2,896 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 1.3 V @ 3 A | ||
|
|
1N4933GDIODE GEN PURP 50V 1A DO41 Taiwan Semiconductor Corporation |
3,088 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.2 V @ 1 A | ||
|
|
SF37GDIODE GEN PURP 3A 500V DO-201AD Taiwan Semiconductor Corporation |
2,700 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 3A (DC) | -55°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
1N5407GH A0GDIODE GEN PURP 3A 800V DO-201AD Taiwan Semiconductor Corporation |
3,757 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A (DC) | -55°C ~ 150°C | 1 V @ 3 A | |
|
HS3DB M4GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
2,214 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
HS3FB M4GDIODE GEN PURP 300V 3A DO214AA Taiwan Semiconductor Corporation |
2,502 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
SS35DIODE SCHOTTKY 3A 50V DO-214AB Taiwan Semiconductor Corporation |
2,433 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 750 mV @ 3 A | ||
|
ES1CL RVGDIODE GEN PURP 150V 1A SUB SMA Taiwan Semiconductor Corporation |
2,571 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS3GB M4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,159 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 3 A | |
|
|
SSL32 V6GDIODE SCHOTTKY 3A 20V DO-214AB Taiwan Semiconductor Corporation |
2,266 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | - | |
|
|
ES1DL RUGDIODE GEN PURP 200V 1A SUB SMA Taiwan Semiconductor Corporation |
3,954 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 1V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
HS3JB M4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
2,999 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
F1T1GHDIODE FAST REC 1A 50V TS-1 Taiwan Semiconductor Corporation |
2,406 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
MBRF2035HDIODE SCHOTTKY 35V 20A ITO220 Taiwan Semiconductor Corporation |
2,003 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 35 V | 35 V | 20A (DC) | -55°C ~ 150°C | 750 mV @ 20 A | |
|
|
SRAF5100HDIODE SCHOTTKY 100V 5A ITO220AC Taiwan Semiconductor Corporation |
3,576 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 100 V | 100 V | 5A (DC) | -55°C ~ 150°C | 850 mV @ 5 A | |
|
|
HERAF1605GDIODE GEN PURP 16A 400V IT0-220A Taiwan Semiconductor Corporation |
3,010 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 16A (DC) | -55°C ~ 150°C | 1.3 V @ 16 A | ||
|
|
SR002DIODE SCHOTTKY 0.5A 90V DO-41 Taiwan Semiconductor Corporation |
3,606 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 500mA (DC) | -55°C ~ 125°C | 550 mV @ 500 mA |
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