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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ES2F M4GDIODE GEN PURP 300V 2A DO214AA Taiwan Semiconductor Corporation |
3,290 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SK83C V6GDIODE SCHOTTKY 8A 30V DO-214AB Taiwan Semiconductor Corporation |
2,092 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | - | |
|
|
ES2G M4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,345 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
SK84C V6GDIODE SCHOTTKY 8A 40V DO-214AB Taiwan Semiconductor Corporation |
2,834 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | - | |
|
|
ESH2B M4GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,156 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A | |
|
|
SK86C V6GDIODE SCHOTTKY 8A 60V DO-214AB Taiwan Semiconductor Corporation |
3,972 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 8A | -55°C ~ 150°C | - | |
|
|
S4J V6GDIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation |
3,275 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 100 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | - | |
|
TSSA5U50HE3G5A, 50V, TRENCH SCHOTTKY RECTIFI Taiwan Semiconductor Corporation |
2,060 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | - | - | 300 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 540 mV @ 5 A |
|
S3KHDIODE GEN PURP 800V 3A DO214AB Taiwan Semiconductor Corporation |
3,354 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
S3GHDIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation |
2,364 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
S3MHDIODE GEN PURP 3A DO214AB Taiwan Semiconductor Corporation |
2,133 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
TSSE3H45 RVGDIODE SCHOTTKY 45V 3A SOD123HE Taiwan Semiconductor Corporation |
2,558 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 3A | -55°C ~ 150°C | 570 mV @ 3 A | |
|
|
S3DHDIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation |
3,489 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
S3JHDIODE GEN PURP 600V 3A DO214AB Taiwan Semiconductor Corporation |
3,119 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
HS3MB R5GDIODE GEN PURP 1KV 3A DO214AA Taiwan Semiconductor Corporation |
2,353 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
MUR460DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
2,727 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | |
|
|
SF64G R0GDIODE GEN PURP 200V 6A DO201AD Taiwan Semiconductor Corporation |
2,664 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A | |
|
|
MUR4L20 R0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
2,576 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 890 mV @ 4 A | |
|
|
MUR4L40 R0GDIODE GEN PURP 400V 4A DO201AD Taiwan Semiconductor Corporation |
3,525 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | |
|
|
SK810C V6GDIODE SCHOTTKY 8A 100V DO-214AB Taiwan Semiconductor Corporation |
2,678 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | - |
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