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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR4L60 R0GDIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
3,892 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 175°C | 1.28 V @ 4 A | |
|
|
1N5406G A0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
3,566 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
TSSA5U60HDIODE SCHOTTKY 60V 5A DO214AC Taiwan Semiconductor Corporation |
3,972 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 60 V | 60 V | 5A (DC) | -55°C ~ 150°C | 560 mV @ 5 A |
|
|
1N5407G A0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
3,785 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
SS29LHR3GDIODE SCHOTTKY 90V 2A SUB SMA Taiwan Semiconductor Corporation |
3,604 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
|
SS215L RUGDIODE SCHOTTKY 150V 2A SUB SMA Taiwan Semiconductor Corporation |
2,090 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
ES1HL R3GDIODE GEN PURP 500V 1A SUB SMA Taiwan Semiconductor Corporation |
3,025 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
SS210LHRUGDIODE SCHOTTKY 100V 2A SUB SMA Taiwan Semiconductor Corporation |
3,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A |
|
|
ES1JL RUGDIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation |
2,256 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 1V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
HS3ADIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation |
3,307 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
|
SF48G R0GDIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation |
2,621 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.7 V @ 4 A | |
|
HS5D V6GDIODE GEN PURP 200V 5A DO214AB Taiwan Semiconductor Corporation |
2,650 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | - | |
|
|
HS5F V6GDIODE GEN PURP 300V 5A DO214AB Taiwan Semiconductor Corporation |
2,700 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 5A | -55°C ~ 150°C | - | |
|
|
HS5G V6GDIODE GEN PURP 400V 5A DO214AB Taiwan Semiconductor Corporation |
3,104 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 150°C | - | |
|
|
HS5J V6GDIODE GEN PURP 600V 5A DO214AB Taiwan Semiconductor Corporation |
3,859 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | - | |
|
|
HS5K V6GDIODE GEN PURP 800V 5A DO214AB Taiwan Semiconductor Corporation |
3,481 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | - | |
|
|
HS5M V6GDIODE GEN PURP 5A DO214AB Taiwan Semiconductor Corporation |
3,077 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 50pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | - | 5A | -55°C ~ 150°C | - | |
|
SS315LWHRVGDIODE SCHOTTKY 150V 3A SOD123W Taiwan Semiconductor Corporation |
3,918 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SS220LWHRVGDIODE SCHOTTKY 200V 2A SOD123W Taiwan Semiconductor Corporation |
2,928 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
ES2HADIODE GEN PURP 500V 2A DO214AC Taiwan Semiconductor Corporation |
3,888 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
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