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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK510C V7GDIODE SCHOTTKY 5A 100V DO-214AB Taiwan Semiconductor Corporation |
1,292 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 300 µA @ 100 V | 100 V | 5A | -55°C ~ 150°C | 850 mV @ 5 A | |
|
SF1604PT C0GDIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation |
3,297 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
SF1604PTHC0GDIODE GEN PURP 200V 16A TO247AD Taiwan Semiconductor Corporation |
2,602 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A |
|
SF1605G C0GDIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation |
3,766 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
SF1605GHC0GDIODE GEN PURP 300V 16A TO220AB Taiwan Semiconductor Corporation |
2,136 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
S8JC V7GDIODE GEN PURP 600V 8A DO214AB Taiwan Semiconductor Corporation |
1,199 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
|
SF1605PT C0GDIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation |
3,821 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
SF1605PTHC0GDIODE GEN PURP 300V 16A TO247AD Taiwan Semiconductor Corporation |
2,695 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
SF1606GHC0GDIODE GEN PURP 400V 16A TO220AB Taiwan Semiconductor Corporation |
2,013 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
SF1606PTHC0GDIODE GEN PURP 400V 16A TO247AD Taiwan Semiconductor Corporation |
3,980 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 16A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
SF1607G C0GDIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation |
3,368 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
SF1607GHC0GDIODE GEN PURP 500V 16A TO220AB Taiwan Semiconductor Corporation |
2,164 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
SF1607PT C0GDIODE GEN PURP 500V 16A TO247AD Taiwan Semiconductor Corporation |
2,814 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
SF1607PTHC0GDIODE GEN PURP 500V 16A TO247AD Taiwan Semiconductor Corporation |
2,886 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
SF1608GHC0GDIODE GEN PURP 600V 16A TO220AB Taiwan Semiconductor Corporation |
3,987 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
SF1608PT C0GDIODE GEN PURP 600V 16A TO247AD Taiwan Semiconductor Corporation |
2,426 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
SF1608PTHC0GDIODE GEN PURP 600V 16A TO247AD Taiwan Semiconductor Corporation |
2,207 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 16A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
SF2001G C0GDIODE GEN PURP 50V 20A TO220AB Taiwan Semiconductor Corporation |
2,110 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 20A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
|
SF2001GHC0GDIODE GEN PURP 50V 20A TO220AB Taiwan Semiconductor Corporation |
2,224 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 20A | -55°C ~ 150°C | 975 mV @ 10 A |
|
|
S8GC V7GDIODE GEN PURP 400V 8A DO214AB Taiwan Semiconductor Corporation |
1,114 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 48pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A |
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