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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SF804GHC0GDIODE GEN PURP 200V 8A TO220AB Taiwan Semiconductor Corporation |
2,958 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
|
|
SF805G C0GDIODE GEN PURP 300V 8A TO220AB Taiwan Semiconductor Corporation |
2,546 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
SF805GHC0GDIODE GEN PURP 300V 8A TO220AB Taiwan Semiconductor Corporation |
3,740 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
SF806G C0GDIODE GEN PURP 400V 8A TO220AB Taiwan Semiconductor Corporation |
2,155 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
SF806GHC0GDIODE GEN PURP 400V 8A TO220AB Taiwan Semiconductor Corporation |
3,290 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
SF807G C0GDIODE GEN PURP 500V 8A TO220AB Taiwan Semiconductor Corporation |
3,107 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
SF807GHC0GDIODE GEN PURP 500V 8A TO220AB Taiwan Semiconductor Corporation |
3,424 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
SF808GHC0GDIODE GEN PURP 600V 8A TO220AB Taiwan Semiconductor Corporation |
3,093 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
SFA1001G C0GDIODE GEN PURP 50V 10A TO220AC Taiwan Semiconductor Corporation |
3,944 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
|
SFA1001GHC0GDIODE GEN PURP 50V 10A TO220AC Taiwan Semiconductor Corporation |
3,105 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
|
|
SFA1002G C0GDIODE GEN PURP 100V 10A TO220AC Taiwan Semiconductor Corporation |
3,490 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
S15MCHV7GDIODE GEN PURP 1KV 15A DO214AB Taiwan Semiconductor Corporation |
1,287 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 93pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 15A | -55°C ~ 150°C | 1.1 V @ 15 A | |
|
SR515 A0GDIODE SCHOTTKY 150V 5A DO201AD Taiwan Semiconductor Corporation |
2,263 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 5A | -55°C ~ 150°C | 1.05 V @ 5 A | |
|
|
TST30L150CW C0GDIODE SCHOTTKY 150V 15A TO220AB Taiwan Semiconductor Corporation |
1,099 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 15A | -55°C ~ 150°C | 920 mV @ 15 A | |
|
|
SFA1002GHC0GDIODE GEN PURP 100V 10A TO220AC Taiwan Semiconductor Corporation |
2,362 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
|
|
SFA1003G C0GDIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation |
3,480 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
|
SFA1003GHC0GDIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation |
2,863 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
|
|
SFA1004G C0GDIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation |
3,079 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
|
SFA1004GHC0GDIODE GEN PURP 200V 10A TO220AC Taiwan Semiconductor Corporation |
2,723 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
|
|
SFA1005G C0GDIODE GEN PURP 300V 10A TO220AC Taiwan Semiconductor Corporation |
2,025 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |
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