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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SFA805GHC0G DIODE GEN PURP 300V 8A TO220AC Taiwan Semiconductor Corporation	3,743	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
SFA806G C0G DIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation	3,170	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
SFA806GHC0G DIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation	2,530	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
SFA807G C0G DIODE GEN PURP 500V 8A TO220AC Taiwan Semiconductor Corporation	3,550	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
SFA807GHC0G DIODE GEN PURP 500V 8A TO220AC Taiwan Semiconductor Corporation	2,675	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 500 V	500 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
SFA808GHC0G DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	2,875	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
SFAF1001G C0G DIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation	2,549	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	170pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 10 A
SFAF1001GHC0G DIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation	2,549	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	170pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	10A	-55°C ~ 150°C	975 mV @ 10 A
UF1MHB0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	2,751	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.7 V @ 1 A
S4J V7G DIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation	1,428	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 600 V	600 V	4A	-55°C ~ 150°C	1.15 V @ 4 A
S4B V7G DIODE GEN PURP 100V 4A DO214AB Taiwan Semiconductor Corporation	1,402	-	RFQ	Ficha técnica	Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 100 V	100 V	4A	-55°C ~ 150°C	1.15 V @ 4 A
S4M V7G DIODE GEN PURP 1KV 4A DO214AB Taiwan Semiconductor Corporation	17,000	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 1000 V	1000 V	4A	-55°C ~ 150°C	1.15 V @ 4 A
UF4001 B0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,264	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
UF4001HB0G DIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation	3,257	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
UF4002 B0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	3,990	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
UF4002HB0G DIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation	2,100	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1 V @ 1 A
UF4003 B0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	3,986	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
UF4003HB0G DIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation	2,832	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1 V @ 1 A
UF4004 B0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,942	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1 V @ 1 A
UF4004HB0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3,401	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1 V @ 1 A