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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SFA1005GHC0GDIODE GEN PURP 300V 10A TO220AC Taiwan Semiconductor Corporation |
3,963 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |
|
SS320 V7GDIODE SCHOTTKY 3A 200V DO-214AB Taiwan Semiconductor Corporation |
1,622 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A | |
|
|
SFA1006G C0GDIODE GEN PURP 400V 10A TO220AC Taiwan Semiconductor Corporation |
3,079 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A | |
|
|
SFA1006GHC0GDIODE GEN PURP 400V 10A TO220AC Taiwan Semiconductor Corporation |
2,840 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A |
|
|
SFA1007G C0GDIODE GEN PURP 500V 10A TO220AC Taiwan Semiconductor Corporation |
2,242 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
|
SFA1007GHC0GDIODE GEN PURP 500V 10A TO220AC Taiwan Semiconductor Corporation |
3,038 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A |
|
|
SFA1008G C0GDIODE GEN PURP 600V 10A TO220AC Taiwan Semiconductor Corporation |
3,537 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
|
SFA1008GHC0GDIODE GEN PURP 600V 10A TO220AC Taiwan Semiconductor Corporation |
3,871 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A |
|
|
SFA801G C0GDIODE GEN PURP 50V 8A TO220AC Taiwan Semiconductor Corporation |
3,705 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
SFA801GHC0GDIODE GEN PURP 50V 8A TO220AC Taiwan Semiconductor Corporation |
3,565 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
|
|
SFA802G C0GDIODE GEN PURP 100V 8A TO220AC Taiwan Semiconductor Corporation |
2,391 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
S5K V7GDIODE GEN PURP 800V 5A DO214AB Taiwan Semiconductor Corporation |
1,440 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 800 V | 800 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A | |
|
|
SS34 V7GDIODE SCHOTTKY 3A 40V DO-214AB Taiwan Semiconductor Corporation |
1,660 | - |
RFQ |
Ficha técnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
SS35 V7GDIODE SCHOTTKY 3A 50V DO-214AB Taiwan Semiconductor Corporation |
1,653 | - |
RFQ |
Ficha técnica |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
SFA802GHC0GDIODE GEN PURP 100V 8A TO220AC Taiwan Semiconductor Corporation |
3,341 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
|
|
SFA803G C0GDIODE GEN PURP 150V 8A TO220AC Taiwan Semiconductor Corporation |
3,966 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
SFA803GHC0GDIODE GEN PURP 150V 8A TO220AC Taiwan Semiconductor Corporation |
3,292 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
|
|
SFA804G C0GDIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation |
2,840 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A | |
|
|
SFA804GHC0GDIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation |
2,339 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 975 mV @ 8 A |
|
|
SFA805G C0GDIODE GEN PURP 300V 8A TO220AC Taiwan Semiconductor Corporation |
2,884 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
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