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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
UF4005 B0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	3,136	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
UF4005HB0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2,479	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
UF4006 B0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	2,987	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
UF4006HB0G DIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation	3,498	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
UF4007 B0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	2,156	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.7 V @ 1 A
UF4007HB0G DIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation	3,473	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.7 V @ 1 A
UG2D B0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	2,588	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A
UG2DHB0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	3,915	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	25 ns	5 µA @ 200 V	200 V	2A	-55°C ~ 150°C	950 mV @ 2 A
UG54G B0G DIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation	2,543	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	10 µA @ 200 V	200 V	5A	-55°C ~ 175°C	1.05 V @ 5 A
HS3A V7G DIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation	1,614	-	RFQ	Ficha técnica	Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	1 V @ 3 A
S4K V7G DIODE GEN PURP 800V 4A DO214AB Taiwan Semiconductor Corporation	1,565	-	RFQ	Ficha técnica	Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 800 V	800 V	4A	-55°C ~ 150°C	1.15 V @ 4 A
HS3G V7G DIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation	1,072	-	RFQ	Ficha técnica	Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
MUR320S V7G DIODE GEN PURP 200V 3A DO214AB Taiwan Semiconductor Corporation	1,700	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	-	25 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 175°C	875 mV @ 3 A
S5A V7G DIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation	1,548	-	RFQ	Ficha técnica	Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 50 V	50 V	5A	-55°C ~ 150°C	1.15 V @ 5 A
S5B V7G DIODE GEN PURP 100V 5A DO214AB Taiwan Semiconductor Corporation	1,210	-	RFQ	Ficha técnica	Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	60pF @ 4V, 1MHz	1.5 µs	10 µA @ 100 V	100 V	5A	-55°C ~ 150°C	1.15 V @ 5 A
UG54GHB0G DIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation	3,615	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	10 µA @ 200 V	200 V	5A	-55°C ~ 175°C	1.05 V @ 5 A
UG56G B0G DIODE GEN PURP 400V 5A DO201AD Taiwan Semiconductor Corporation	3,801	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	10 µA @ 400 V	400 V	5A	-55°C ~ 175°C	1.55 V @ 5 A
UG56GHB0G DIODE GEN PURP 400V 5A DO201AD Taiwan Semiconductor Corporation	3,684	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	10 µA @ 400 V	400 V	5A	-55°C ~ 175°C	1.55 V @ 5 A
UG58G B0G DIODE GEN PURP 600V 5A DO201AD Taiwan Semiconductor Corporation	3,796	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	30 µA @ 600 V	600 V	5A	-55°C ~ 150°C	2.1 V @ 5 A
UG58GHB0G DIODE GEN PURP 600V 5A DO201AD Taiwan Semiconductor Corporation	2,954	-	RFQ	Ficha técnica	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	30 µA @ 600 V	600 V	5A	-55°C ~ 150°C	2.1 V @ 5 A