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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
SF3001PT C0G DIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation	2,002	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	30A	-55°C ~ 150°C	950 mV @ 15 A
SF3001PTHC0G DIODE GEN PURP 50V 30A TO247AD Taiwan Semiconductor Corporation	2,933	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	30A	-55°C ~ 150°C	950 mV @ 15 A
SF3002PT C0G DIODE GEN PURP 100V 30A TO247AD Taiwan Semiconductor Corporation	3,716	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	30A	-55°C ~ 150°C	950 mV @ 15 A
SF3002PTHC0G DIODE GEN PURP 100V 30A TO247AD Taiwan Semiconductor Corporation	2,213	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	30A	-55°C ~ 150°C	950 mV @ 15 A
SF3003PT C0G DIODE GEN PURP 150V 30A TO247AD Taiwan Semiconductor Corporation	2,596	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	30A	-55°C ~ 150°C	950 mV @ 15 A
SF3003PTHC0G DIODE GEN PURP 150V 30A TO247AD Taiwan Semiconductor Corporation	3,405	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	30A	-55°C ~ 150°C	950 mV @ 15 A
SF3004PTHC0G DIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation	3,326	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	30A	-55°C ~ 150°C	950 mV @ 15 A
SF3005PT C0G DIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation	2,560	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	30A	-55°C ~ 150°C	1.3 V @ 15 A
SF3005PTHC0G DIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation	2,697	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	30A	-55°C ~ 150°C	1.3 V @ 15 A
SF3006PTHC0G DIODE GEN PURP 400V 30A TO247AD Taiwan Semiconductor Corporation	2,209	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	30A	-55°C ~ 150°C	1.3 V @ 15 A
SF801G C0G DIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation	3,692	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	975 mV @ 8 A
SF801GHC0G DIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation	2,278	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	975 mV @ 8 A
ES3DB R5G DIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation	1,885	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	46pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	3A	-55°C ~ 150°C	1 V @ 3 A
S15GCHV7G DIODE GEN PURP 400V 15A DO214AB Taiwan Semiconductor Corporation	1,690	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	93pF @ 4V, 1MHz	-	1 µA @ 400 V	400 V	15A	-55°C ~ 150°C	1.1 V @ 15 A
SK56C V7G DIODE SCHOTTKY 5A 60V DO-214AB Taiwan Semiconductor Corporation	1,374	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	500 µA @ 60 V	60 V	5A	-55°C ~ 150°C	750 mV @ 5 A
SF802G C0G DIODE GEN PURP 100V 8A TO220AB Taiwan Semiconductor Corporation	2,048	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	975 mV @ 8 A
SF802GHC0G DIODE GEN PURP 100V 8A TO220AB Taiwan Semiconductor Corporation	2,404	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	975 mV @ 8 A
SF803G C0G DIODE GEN PURP 150V 8A TO220AB Taiwan Semiconductor Corporation	3,249	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	975 mV @ 8 A
SF803GHC0G DIODE GEN PURP 150V 8A TO220AB Taiwan Semiconductor Corporation	2,087	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	975 mV @ 8 A
SF804G C0G DIODE GEN PURP 200V 8A TO220AB Taiwan Semiconductor Corporation	2,407	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	975 mV @ 8 A