Transistores - Bipolar (BJT) - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA1020-Y,T6KEHF(M

2SA1020-Y,T6KEHF(M

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,913 -

RFQ

2SA1020-Y,T6KEHF(M

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1315-Y,HOF(M

2SA1315-Y,HOF(M

TRANS PNP 80V 2A TO92MOD

Toshiba Semiconductor and Storage
3,199 -

RFQ

2SA1315-Y,HOF(M

Ficha técnica

Bulk - Obsolete PNP 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 80MHz 150°C (TJ) Through Hole
2SA1315-Y,T6ASNF(J

2SA1315-Y,T6ASNF(J

TRANS PNP 80V 2A TO92MOD

Toshiba Semiconductor and Storage
2,259 -

RFQ

2SA1315-Y,T6ASNF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 80MHz 150°C (TJ) Through Hole
2SA1382,T6MIBF(J

2SA1382,T6MIBF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,695 -

RFQ

2SA1382,T6MIBF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 33mA, 1A 100nA (ICBO) 150 @ 500mA, 2V 900 mW 110MHz 150°C (TJ) Through Hole
2SA1425-Y,T2F(J

2SA1425-Y,T2F(J

TRANS PNP 120V 0.8A MSTM

Toshiba Semiconductor and Storage
3,701 -

RFQ

2SA1425-Y,T2F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 1 W 120MHz 150°C (TJ) Through Hole
2SA1428-O,T2CLAF(J

2SA1428-O,T2CLAF(J

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,417 -

RFQ

2SA1428-O,T2CLAF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-O,T2CLAF(M

2SA1428-O,T2CLAF(M

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,982 -

RFQ

2SA1428-O,T2CLAF(M

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-O,T2WNLF(J

2SA1428-O,T2WNLF(J

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,662 -

RFQ

2SA1428-O,T2WNLF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-Y(T2TR,A,F

2SA1428-Y(T2TR,A,F

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
2,362 -

RFQ

2SA1428-Y(T2TR,A,F

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-Y,T2F(J

2SA1428-Y,T2F(J

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
2,826 -

RFQ

2SA1428-Y,T2F(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1428-Y,T2F(M

2SA1428-Y,T2F(M

TRANS PNP 50V 2A MSTM

Toshiba Semiconductor and Storage
3,044 -

RFQ

2SA1428-Y,T2F(M

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1429-Y(T2OMI,FM

2SA1429-Y(T2OMI,FM

TRANS PNP 80V 2A MSTM

Toshiba Semiconductor and Storage
2,740 -

RFQ

2SA1429-Y(T2OMI,FM

Ficha técnica

Bulk - Obsolete PNP 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 80MHz 150°C (TJ) Through Hole
2SA1429-Y(T2TR,F,M

2SA1429-Y(T2TR,F,M

TRANS PNP 80V 2A MSTM

Toshiba Semiconductor and Storage
2,567 -

RFQ

2SA1429-Y(T2TR,F,M

Ficha técnica

Bulk - Obsolete PNP 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 80MHz 150°C (TJ) Through Hole
2SA1680(F,M)

2SA1680(F,M)

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,617 -

RFQ

2SA1680(F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680(T6DNSO,F,M

2SA1680(T6DNSO,F,M

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,383 -

RFQ

2SA1680(T6DNSO,F,M

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,F(J

2SA1680,F(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,064 -

RFQ

2SA1680,F(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,T6ASTIF(J

2SA1680,T6ASTIF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,169 -

RFQ

2SA1680,T6ASTIF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,T6F(J

2SA1680,T6F(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,656 -

RFQ

2SA1680,T6F(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1680,T6SCMDF(J

2SA1680,T6SCMDF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
3,774 -

RFQ

2SA1680,T6SCMDF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1761,F(J

2SA1761,F(J

TRANS PNP 50V 3A TO92MOD

Toshiba Semiconductor and Storage
2,900 -

RFQ

2SA1761,F(J

Ficha técnica

Bulk - Obsolete PNP 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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