Transistores - Bipolar (BJT) - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA965-O,F(J

2SA965-O,F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,593 -

RFQ

2SA965-O,F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y(F,M)

2SA965-Y(F,M)

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
3,361 -

RFQ

2SA965-Y(F,M)

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y(T6CANO,FM

2SA965-Y(T6CANO,FM

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,024 -

RFQ

2SA965-Y(T6CANO,FM

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,F(J

2SA965-Y,F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,040 -

RFQ

2SA965-Y,F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,SWFF(M

2SA965-Y,SWFF(M

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,124 -

RFQ

2SA965-Y,SWFF(M

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,T6F(J

2SA965-Y,T6F(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,503 -

RFQ

2SA965-Y,T6F(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SA965-Y,T6KOJPF(J

2SA965-Y,T6KOJPF(J

TRANS PNP 120V 0.8A TO92MOD

Toshiba Semiconductor and Storage
2,142 -

RFQ

2SA965-Y,T6KOJPF(J

Ficha técnica

Bulk - Obsolete PNP 800 mA 120 V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 900 mW 120MHz 150°C (TJ) Through Hole
2SB1375,CLARIONF(M

2SB1375,CLARIONF(M

TRANS PNP 60V 3A TO220NIS

Toshiba Semiconductor and Storage
3,199 -

RFQ

2SB1375,CLARIONF(M

Ficha técnica

Bulk - Obsolete PNP 3 A 60 V 1.5V @ 200mA, 2A 10µA (ICBO) 100 @ 500mA, 5V 2 W 9MHz 150°C (TJ) Through Hole
2SB1457(T6CANO,F,M

2SB1457(T6CANO,F,M

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
3,570 -

RFQ

2SB1457(T6CANO,F,M

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457(T6CNO,A,F)

2SB1457(T6CNO,A,F)

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,253 -

RFQ

2SB1457(T6CNO,A,F)

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457(T6DW,F,M)

2SB1457(T6DW,F,M)

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,554 -

RFQ

2SB1457(T6DW,F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457(TE6,F,M)

2SB1457(TE6,F,M)

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,011 -

RFQ

2SB1457(TE6,F,M)

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457,T6TOTOF(J

2SB1457,T6TOTOF(J

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
2,395 -

RFQ

2SB1457,T6TOTOF(J

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1457,T6YMEF(M

2SB1457,T6YMEF(M

TRANS PNP 100V 2A TO92MOD

Toshiba Semiconductor and Storage
3,940 -

RFQ

2SB1457,T6YMEF(M

Ficha técnica

Bulk - Obsolete PNP 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 50MHz 150°C (TJ) Through Hole
2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

TRANS PNP 100V 4A TO220NIS

Toshiba Semiconductor and Storage
2,515 -

RFQ

2SB1481(TOJS,Q,M)

Ficha técnica

Bulk - Obsolete PNP 4 A 100 V 1.5V @ 6mA, 3A 2µA (ICBO) 2000 @ 3A, 2V 2 W - 150°C (TJ) Through Hole
2SB1495,Q(J

2SB1495,Q(J

TRANS PNP 100V 3A TO220NIS

Toshiba Semiconductor and Storage
2,754 -

RFQ

2SB1495,Q(J

Ficha técnica

Bulk - Obsolete PNP 3 A 100 V 1.5V @ 1.5mA, 1.5A 10µA (ICBO) 2000 @ 2A, 2V 2 W - 150°C (TJ) Through Hole
2SC2229-O(MITIF,M)

2SC2229-O(MITIF,M)

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,224 -

RFQ

2SC2229-O(MITIF,M)

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SC2229-O(SHP,F,M)

2SC2229-O(SHP,F,M)

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
2,860 -

RFQ

2SC2229-O(SHP,F,M)

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SC2229-O(SHP1,F,M

2SC2229-O(SHP1,F,M

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,628 -

RFQ

2SC2229-O(SHP1,F,M

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
2SC2229-O(T6MIT1FM

2SC2229-O(T6MIT1FM

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,558 -

RFQ

2SC2229-O(T6MIT1FM

Ficha técnica

Bulk - Obsolete NPN 50 mA 150 V 500mV @ 1mA, 10mA 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) Through Hole
Total 438 Record«Prev1... 910111213141516...22Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário