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Transistores - Bipolar (BJT) - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SA1931,BOSCHQ(JTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
3,755 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
2SA1931,KEHINQ(MTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
2,048 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
2SA1931,NETQ(JTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
2,978 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
2SA1931,NETQ(MTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
2,746 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
2SA1931,NIKKIQ(JTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
2,795 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
2SA1931,NSEIKIQ(JTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
3,737 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
2SA1931,Q(JTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
2,300 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
|
2SA1931,SINFQ(JTRANS PNP 50V 5A TO220NIS Toshiba Semiconductor and Storage |
2,290 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 5 A | 50 V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2 W | 60MHz | 150°C (TJ) | Through Hole |
|
2SA1972,F(JTRANS PNP 400V 0.5A TO92MOD Toshiba Semiconductor and Storage |
2,550 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 500 mA | 400 V | 1V @ 10mA, 100mA | 10µA (ICBO) | 140 @ 20mA, 5V | 900 mW | 35MHz | 150°C (TJ) | Through Hole |
|
|
2SA1972,T6WNLF(JTRANS PNP 400V 0.5A TO92MOD Toshiba Semiconductor and Storage |
3,880 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 500 mA | 400 V | 1V @ 10mA, 100mA | 10µA (ICBO) | 140 @ 20mA, 5V | 900 mW | 35MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-O(TE6,F,M)TRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
3,748 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y(JVC1,F,M)TRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
3,102 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y(T6JVC1,FMTRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,264 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y(T6ONK1,FMTRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,013 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y(T6SHRP,FMTRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
3,275 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y(TE6,F,M)TRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,337 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y,F(JTRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
3,857 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y,ONK-1F(JTRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,275 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA949-Y,ONK-1F(MTRANS PNP 150V 0.05A TO92MOD Toshiba Semiconductor and Storage |
3,806 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 50 mA | 150 V | 800mV @ 1mA, 10A | 100nA (ICBO) | 70 @ 10mA, 5V | 800 mW | 120MHz | 150°C (TJ) | Through Hole |
|
|
2SA965-O(TE6,F,M)TRANS PNP 120V 0.8A TO92MOD Toshiba Semiconductor and Storage |
2,202 | - |
RFQ |
Ficha técnica |
Bulk | - | Obsolete | PNP | 800 mA | 120 V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900 mW | 120MHz | 150°C (TJ) | Through Hole |
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