Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCPF190N65S3L1

FCPF190N65S3L1

MOSFET N-CH 650V 14A TO220F-3

onsemi
224 -

RFQ

FCPF190N65S3L1

Ficha técnica

Tube SuperFET® III Obsolete N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 190mOhm @ 7A, 10V 4.5V @ 1.4mA 30 nC @ 10 V ±30V 1225 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD15N60M2-EP

STD15N60M2-EP

MOSFET N-CH 600V 11A DPAK

STMicroelectronics
2,416 -

RFQ

STD15N60M2-EP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 378mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7892BDP-T1-E3

SI7892BDP-T1-E3

MOSFET N-CH 30V 15A PPAK SO-8

Vishay Siliconix
2,313 -

RFQ

SI7892BDP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 4.2mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V 3775 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STL4N80K5

STL4N80K5

MOSFET N-CH 800V 2.5A POWERFLAT

STMicroelectronics
801 -

RFQ

STL4N80K5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 2.5Ohm @ 1.5A, 10V 5V @ 100µA 10.5 nC @ 10 V ±30V 175 pF @ 100 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD4N62K3

STD4N62K3

MOSFET N-CH 620V 3.8A DPAK

STMicroelectronics
480 -

RFQ

STD4N62K3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 3.8A (Tc) 10V 1.95Ohm @ 1.9A, 10V 4.5V @ 50µA 14 nC @ 10 V ±30V 450 pF @ 50 V - 70W (Tc) 150°C (TJ) Surface Mount
IXFH52N30Q

IXFH52N30Q

MOSFET N-CH 300V 52A TO247AD

IXYS
3,324 -

RFQ

IXFH52N30Q

Ficha técnica

Tube HiPerFET™, Q Class Not For New Designs N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 60mOhm @ 500mA, 10V 4V @ 4mA 150 nC @ 10 V ±20V 5300 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH80N20Q

IXFH80N20Q

MOSFET N-CH 200V 80A TO247AD

IXYS
3,642 -

RFQ

IXFH80N20Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 80A (Tc) 10V 28mOhm @ 500mA, 10V 4V @ 4mA 180 nC @ 10 V ±20V 4600 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK120N20

IXFK120N20

MOSFET N-CH 200V 120A TO-264AA

IXYS
2,236 -

RFQ

IXFK120N20

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 17mOhm @ 60A, 10V 4V @ 8mA 300 nC @ 10 V ±20V 9100 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK180N10

IXFK180N10

MOSFET N-CH 100V 180A TO264AA

IXYS
2,254 -

RFQ

IXFK180N10

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 390 nC @ 10 V ±20V 10900 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK27N80

IXFK27N80

MOSFET N-CH 800V 27A TO264AA

IXYS
2,562 -

RFQ

IXFK27N80

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V 300mOhm @ 13.5A, 10V 4.5V @ 8mA 400 nC @ 10 V ±20V 9740 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK90N20Q

IXFK90N20Q

MOSFET N-CH 200V 90A TO264AA

IXYS
2,047 -

RFQ

IXFK90N20Q

Ficha técnica

Tube HiPerFET™, Q Class Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 22mOhm @ 45A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 6800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7469

IRF7469

MOSFET N-CH 40V 9A 8SO

Infineon Technologies
2,551 -

RFQ

IRF7469

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF3708L

IRF3708L

MOSFET N-CH 30V 62A TO262

Infineon Technologies
2,612 -

RFQ

IRF3708L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU014N

IRLU014N

MOSFET N-CH 55V 10A I-PAK

Infineon Technologies
3,409 -

RFQ

IRLU014N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 1V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3714

IRLR3714

MOSFET N-CH 20V 36A DPAK

Infineon Technologies
3,208 -

RFQ

IRLR3714

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3708

IRFR3708

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
3,812 -

RFQ

IRFR3708

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7701

IRF7701

MOSFET P-CH 12V 10A 8TSSOP

Infineon Technologies
3,438 -

RFQ

IRF7701

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 10A (Tc) 1.8V, 4.5V 11mOhm @ 10A, 4.5V 1.2V @ 250µA 100 nC @ 4.5 V ±8V 5050 pF @ 10 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF644NS

IRF644NS

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
3,751 -

RFQ

IRF644NS

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7809AV

IRF7809AV

MOSFET N-CH 30V 13.3A 8SO

Infineon Technologies
2,443 -

RFQ

IRF7809AV

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP16CN10NGXKSA1

IPP16CN10NGXKSA1

MOSFET N-CH 100V 53A TO220-3

Infineon Technologies
134 -

RFQ

IPP16CN10NGXKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 53A (Tc) 10V 16.5mOhm @ 53A, 10V 4V @ 61µA 48 nC @ 10 V ±20V 3220 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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