Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH10P50

IXTH10P50

MOSFET P-CH 500V 10A TO247

IXYS
2,592 -

RFQ

IXTH10P50

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 900mOhm @ 5A, 10V 5V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN21N100

IXTN21N100

MOSFET N-CH 1000V 21A SOT227B

IXYS
2,605 -

RFQ

IXTN21N100

Ficha técnica

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 550mOhm @ 500mA, 10V 4.5V @ 500µA 250 nC @ 10 V ±20V 8400 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IRFB42N20D

IRFB42N20D

MOSFET N-CH 200V 44A TO220AB

Infineon Technologies
3,250 -

RFQ

IRFB42N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK122800L

2SK122800L

MOSFET N-CH 50V 50MA MINI3-G1

Panasonic Electronic Components
2,433 -

RFQ

2SK122800L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 50mA (Ta) 2.5V 50Ohm @ 10mA, 2.5V 1.1V @ 100µA - 10V 4.5 pF @ 5 V - 150mW (Ta) 150°C (TJ) Surface Mount
VM0550-2F

VM0550-2F

MOSFET N-CH 100V 590A MODULE

IXYS
2,418 -

RFQ

Bulk HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 590A (Tc) - 2.1mOhm @ 500mA, 10V - 2000 nC @ 10 V - 50000 pF @ 25 V - 2200W - Chassis Mount
IRF7726TR

IRF7726TR

MOSFET P-CH 30V 7A MICRO8

Infineon Technologies
2,789 -

RFQ

IRF7726TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 26mOhm @ 7A, 10V 2.5V @ 250µA 69 nC @ 10 V ±20V 2204 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK9611-80E,118

BUK9611-80E,118

MOSFET N-CH 80V 75A D2PAK

Nexperia USA Inc.
492 -

RFQ

BUK9611-80E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 5V 10mOhm @ 20A, 10V 2.1V @ 1mA 48.8 nC @ 5 V ±10V 7149 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6100

IRF6100

MOSFET P-CH 20V 5.1A 4FLIPFET

Infineon Technologies
2,691 -

RFQ

IRF6100

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.1A (Ta) 2.5V, 4.5V 65mOhm @ 5.1A, 4.5V 1.2V @ 250µA 21 nC @ 5 V ±12V 1230 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF10N60C

FQPF10N60C

MOSFET N-CH 600V 9.5A TO220F

onsemi
760 -

RFQ

FQPF10N60C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.5A (Tc) 10V 730mOhm @ 4.75A, 10V 4V @ 250µA 57 nC @ 10 V ±30V 2040 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU3708

IRFU3708

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
3,090 -

RFQ

IRFU3708

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44VS

IRFZ44VS

MOSFET N-CH 60V 55A D2PAK

Infineon Technologies
3,377 -

RFQ

IRFZ44VS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 16.5mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1812 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3706

IRFR3706

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
3,616 -

RFQ

IRFR3706

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD20NF20

STD20NF20

MOSFET N-CH 200V 18A DPAK

STMicroelectronics
442 -

RFQ

STD20NF20

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 125mOhm @ 10A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 940 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFU13N65M2

STFU13N65M2

MOSFET N-CH 650V 10A TO220FP

STMicroelectronics
983 -

RFQ

STFU13N65M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 590 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
STL7N80K5

STL7N80K5

MOSFET N-CH 800V 3.6A POWERFLAT

STMicroelectronics
3,482 -

RFQ

STL7N80K5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 1.2Ohm @ 3A, 10V 5V @ 100µA 13.4 nC @ 10 V ±30V 360 pF @ 100 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP80N6F6

STP80N6F6

MOSFET N-CH 60V 110A TO220

STMicroelectronics
642 -

RFQ

STP80N6F6

Ficha técnica

Tube Automotive, AEC-Q101, DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 5.8mOhm @ 50A, 10V 4.5V @ 250µA 122 nC @ 10 V ±20V 7480 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
STL13N60M2

STL13N60M2

MOSFET N-CH 600V 7A POWERFLAT HV

STMicroelectronics
279 -

RFQ

STL13N60M2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 420mOhm @ 4.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 580 pF @ 100 V - 55W (Tc) 150°C (TJ) Surface Mount
STF5N62K3

STF5N62K3

MOSFET N-CH 620V 4.2A TO220FP

STMicroelectronics
976 -

RFQ

STF5N62K3

Ficha técnica

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 4.2A (Tc) 10V 1.6Ohm @ 2.1A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 680 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB18NF30

STB18NF30

MOSFET N-CH 330V 18A D2PAK

STMicroelectronics
764 -

RFQ

STB18NF30

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ II Active N-Channel MOSFET (Metal Oxide) 330 V 18A (Tc) 10V 180mOhm @ 9A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1650 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB6NK60ZT4

STB6NK60ZT4

MOSFET N-CH 600V 6A D2PAK

STMicroelectronics
132 -

RFQ

STB6NK60ZT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Record«Prev1... 125126127128129130131132...2123Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário