Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R8002ANJFRGTL

R8002ANJFRGTL

MOSFET N-CH 800V 2A LPTS

Rohm Semiconductor
371 -

RFQ

R8002ANJFRGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5V @ 1mA 13 nC @ 10 V ±30V 250 pF @ 25 V - 62W (Tc) 150°C (TJ) Surface Mount
FCB260N65S3

FCB260N65S3

MOSFET N-CH 650V 12A D2PAK

onsemi
206 -

RFQ

FCB260N65S3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 1.2mA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP31N50L

IRFP31N50L

MOSFET N-CH 500V 31A TO247-3

Vishay Siliconix
3,946 -

RFQ

IRFP31N50L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 31A (Tc) 10V 180mOhm @ 19A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 5000 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7706

IRF7706

MOSFET P-CH 30V 7A 8TSSOP

Infineon Technologies
2,884 -

RFQ

IRF7706

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 22mOhm @ 7A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2211 pF @ 25 V - 1.51W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFPS43N50K

IRFPS43N50K

MOSFET N-CH 500V 47A SUPER247

Vishay Siliconix
2,582 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 90mOhm @ 28A, 10V 5V @ 250µA 350 nC @ 10 V ±30V 8310 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7241

IRF7241

MOSFET P-CH 40V 6.2A 8SO

Infineon Technologies
2,260 -

RFQ

IRF7241

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 6.2A (Ta) 4.5V, 10V 41mOhm @ 6.2A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 3220 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFPS40N50L

IRFPS40N50L

MOSFET N-CH 500V 46A SUPER247

Vishay Siliconix
3,550 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP32N50K

IRFP32N50K

MOSFET N-CH 500V 32A TO247-3

Vishay Siliconix
2,974 -

RFQ

IRFP32N50K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 32A (Tc) 10V 160mOhm @ 32A, 10V 5V @ 250µA 190 nC @ 10 V ±30V 5280 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU3707

IRFU3707

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
2,217 -

RFQ

IRFU3707

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP3703

IRFP3703

MOSFET N-CH 30V 210A TO247AC

Infineon Technologies
2,164 -

RFQ

IRFP3703

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 210A (Tc) 7V, 10V 2.8mOhm @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V 8250 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB18N50K

IRFB18N50K

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix
2,171 -

RFQ

IRFB18N50K

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 2830 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP23N50L

IRFP23N50L

MOSFET N-CH 500V 23A TO247-3

Vishay Siliconix
2,361 -

RFQ

IRFP23N50L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 235mOhm @ 14A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3600 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460P

IRFP460P

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
3,291 -

RFQ

IRFP460P

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) - 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V - 4200 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRFU3706

IRFU3706

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
3,374 -

RFQ

IRFU3706

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLL1503

IRLL1503

MOSFET N-CH 30V 75A SOT223

Infineon Technologies
2,996 -

RFQ

IRLL1503

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) - 3.3mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V - 5730 pF @ 25 V - - - Through Hole
IRLU3714

IRLU3714

MOSFET N-CH 20V 36A I-PAK

Infineon Technologies
2,857 -

RFQ

IRLU3714

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3715

IRLR3715

MOSFET N-CH 20V 54A DPAK

Infineon Technologies
3,299 -

RFQ

IRLR3715

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3715

IRLU3715

MOSFET N-CH 20V 54A I-PAK

Infineon Technologies
3,923 -

RFQ

IRLU3715

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711S

IRF3711S

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,718 -

RFQ

IRF3711S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3711

IRFR3711

MOSFET N-CH 20V 100A DPAK

Infineon Technologies
2,821 -

RFQ

IRFR3711

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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