Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL620STRLPBF

IRL620STRLPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
560 -

RFQ

IRL620STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 10V 800mOhm @ 3.1A, 10V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STH175N4F6-2AG

STH175N4F6-2AG

MOSFET N-CH 40V 120A H2PAK-2

STMicroelectronics
622 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ F6 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.4mOhm @ 60A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 7735 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5802

IRF5802

MOSFET N-CH 150V 900MA MICRO6

Infineon Technologies
2,555 -

RFQ

IRF5802

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 900mA (Ta) 10V 1.2Ohm @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V 88 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5804

IRF5804

MOSFET P-CH 40V 2.5A MICRO6

Infineon Technologies
3,634 -

RFQ

IRF5804

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 2.5A (Ta) 4.5V, 10V 198mOhm @ 2.5A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 680 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5800

IRF5800

MOSFET P-CH 30V 4A MICRO6

Infineon Technologies
2,505 -

RFQ

IRF5800

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 85mOhm @ 4A, 10V 1V @ 250µA 17 nC @ 10 V ±20V 535 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU5410

IRFU5410

MOSFET P-CH 100V 13A IPAK

Infineon Technologies
3,623 -

RFQ

IRFU5410

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7807A

IRF7807A

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,601 -

RFQ

IRF7807A

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP17N50L

IRFP17N50L

MOSFET N-CH 500V 16A TO247-3

Vishay Siliconix
2,136 -

RFQ

IRFP17N50L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 320mOhm @ 9.9A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 2760 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3714S

IRL3714S

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
2,877 -

RFQ

IRL3714S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714L

IRL3714L

MOSFET N-CH 20V 36A TO262

Infineon Technologies
3,975 -

RFQ

IRL3714L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715L

IRL3715L

MOSFET N-CH 20V 54A TO262

Infineon Technologies
3,246 -

RFQ

IRL3715L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715S

IRL3715S

MOSFET N-CH 20V 54A D2PAK

Infineon Technologies
2,304 -

RFQ

IRL3715S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5805

IRF5805

MOSFET P-CH 30V 3.8A MICRO6

Infineon Technologies
3,782 -

RFQ

IRF5805

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 98mOhm @ 3.8A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 511 pF @ 25 V - 2W (Ta) - Surface Mount
IRF5803D2

IRF5803D2

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies
3,997 -

RFQ

IRF5803D2

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 1110 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3443DV

SI3443DV

MOSFET P-CH 20V 4.4A MICRO6

Infineon Technologies
2,640 -

RFQ

SI3443DV

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±12V 1079 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7425

IRF7425

MOSFET P-CH 20V 15A 8SO

Infineon Technologies
3,211 -

RFQ

IRF7425

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 15A (Ta) 2.5V, 4.5V 8.2mOhm @ 15A, 4.5V 1.2V @ 250µA 130 nC @ 4.5 V ±12V 7980 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44R

IRFZ44R

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
2,132 -

RFQ

IRFZ44R

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQP100N04-3M6_GE3

SQP100N04-3M6_GE3

MOSFET N-CH 40V 100A TO220AB

Vishay Siliconix
252 -

RFQ

SQP100N04-3M6_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.6mOhm @ 30A, 10V 3.5V @ 250µA 135 nC @ 10 V ±20V 7200 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOB360A70L

AOB360A70L

MOSFET N-CH 700V 12A TO263

Alpha & Omega Semiconductor Inc.
1,006 -

RFQ

Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 700 V 12A (Tc) 10V 360mOhm @ 6A, 10V 4V @ 250µA 22.5 nC @ 10 V ±20V 1360 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7704

IRF7704

MOSFET P-CH 40V 4.6A 8TSSOP

Infineon Technologies
3,029 -

RFQ

IRF7704

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Ta) 4.5V, 10V 46mOhm @ 4.6A, 10V 3V @ 250µA 38 nC @ 4.5 V ±20V 3150 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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