Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF644N

IRF644N

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix
2,150 -

RFQ

IRF644N

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3709

IRFU3709

MOSFET N-CH 30V 90A IPAK

Infineon Technologies
2,398 -

RFQ

IRFU3709

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 4.5 V ±20V 2672 pF @ 16 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709S

IRF3709S

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
3,539 -

RFQ

IRF3709S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6507KNXC7G

R6507KNXC7G

650V 7A TO-220FM, HIGH-SPEED SWI

Rohm Semiconductor
980 -

RFQ

R6507KNXC7G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 665mOhm @ 2.4A, 10V 5V @ 200µA 14.5 nC @ 10 V ±20V 470 pF @ 25 V - 46W (Tc) 150°C (TJ) Through Hole
IRFU3711

IRFU3711

MOSFET N-CH 20V 100A IPAK

Infineon Technologies
2,500 -

RFQ

IRFU3711

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3711L

IRF3711L

MOSFET N-CH 20V 110A TO262

Infineon Technologies
3,885 -

RFQ

IRF3711L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIE874DF-T1-GE3

SIE874DF-T1-GE3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
413 -

RFQ

SIE874DF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.17mOhm @ 20A, 10V 2.2V @ 250µA 145 nC @ 10 V ±20V 6200 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3709

IRF3709

MOSFET N-CH 30V 90A TO220AB

Infineon Technologies
3,924 -

RFQ

IRF3709

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6011KNJTL

R6011KNJTL

MOSFET N-CH 600V 11A LPTS

Rohm Semiconductor
398 -

RFQ

R6011KNJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 124W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF630NL

IRF630NL

MOSFET N-CH 200V 9.3A TO262

Infineon Technologies
3,963 -

RFQ

IRF630NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF165N65S3L1

FCPF165N65S3L1

MOSFET N-CH 650V 19A TO220F-3

onsemi
3,304 -

RFQ

FCPF165N65S3L1

Ficha técnica

Tube SuperFET® III Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 1.9mA 35 nC @ 10 V ±30V 1415 pF @ 400 V - 35W (Tc) -55°C ~ 150°C Through Hole
IRFB13N50A

IRFB13N50A

MOSFET N-CH 500V 14A TO220AB

Vishay Siliconix
2,047 -

RFQ

IRFB13N50A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 450mOhm @ 8.4A, 10V 4V @ 250µA 81 nC @ 10 V ±30V 1910 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1704

IRF1704

MOSFET N-CH 40V 170A TO220AB

Infineon Technologies
2,343 -

RFQ

IRF1704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6950 pF @ 25 V - 230W (Tc) -55°C ~ 200°C (TJ) Through Hole
IRF7702

IRF7702

MOSFET P-CH 12V 8A 8TSSOP

Infineon Technologies
3,575 -

RFQ

IRF7702

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 14mOhm @ 8A, 4.5V 1.2V @ 250µA 81 nC @ 4.5 V ±8V 3470 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3707

IRFR3707

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
2,847 -

RFQ

IRFR3707

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3704

IRFU3704

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
3,511 -

RFQ

IRFU3704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1607

IRF1607

MOSFET N-CH 75V 142A TO220AB

Infineon Technologies
3,011 -

RFQ

IRF1607

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 142A (Tc) 10V 7.5mOhm @ 85A, 10V 4V @ 250µA 320 nC @ 10 V ±20V 7750 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7451

IRF7451

MOSFET N-CH 150V 3.6A 8SO

Infineon Technologies
2,524 -

RFQ

IRF7451

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 3.6A (Ta) 10V 90mOhm @ 2.2A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 990 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR12N25D

IRFR12N25D

MOSFET N-CH 250V 14A DPAK

Infineon Technologies
3,588 -

RFQ

IRFR12N25D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU12N25D

IRFU12N25D

MOSFET N-CH 250V 14A IPAK

Infineon Technologies
2,366 -

RFQ

IRFU12N25D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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