Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF5803D2TR

IRF5803D2TR

MOSFET P-CH 40V 3.4A 8SO

Infineon Technologies
3,304 -

RFQ

IRF5803D2TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 1110 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STI76NF75

STI76NF75

MOSFET N-CH 75V 80A I2PAK

STMicroelectronics
1,000 -

RFQ

STI76NF75

Ficha técnica

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STFH18N60M2

STFH18N60M2

MOSFET N-CH 600V 13A TO220FP

STMicroelectronics
412 -

RFQ

STFH18N60M2

Ficha técnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 280mOhm @ 6.5A, 10V 4V @ 250µA 21.5 nC @ 10 V ±25V 791 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4842BDY-T1-E3

SI4842BDY-T1-E3

MOSFET N-CH 30V 28A 8SO

Vishay Siliconix
146 -

RFQ

SI4842BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Tc) 4.5V, 10V 4.2mOhm @ 20A, 10V 3V @ 250µA 100 nC @ 10 V ±20V 3650 pF @ 15 V - 3W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS86300

FDMS86300

MOSFET N-CH 80V 19A/80A 8PQFN

onsemi
2,770 -

RFQ

FDMS86300

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 19A (Ta), 80A (Tc) 8V, 10V 3.9mOhm @ 19A, 10V 4.5V @ 250µA 86 nC @ 10 V ±20V 7082 pF @ 40 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD86540

FDD86540

MOSFET N-CH 60V 21.5A/50A DPAK

onsemi
7,570 -

RFQ

FDD86540

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 21.5A (Ta), 50A (Tc) 8V, 10V 4.1mOhm @ 21.5A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 6340 pF @ 30 V - 3.1W (Ta), 127W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF10N50CF

FQPF10N50CF

MOSFET N-CH 500V 10A TO220F

onsemi
783 -

RFQ

FQPF10N50CF

Ficha técnica

Tube FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 610mOhm @ 5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2096 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF5803TR

IRF5803TR

MOSFET P-CH 40V 3.4A MICRO6

Infineon Technologies
3,059 -

RFQ

IRF5803TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 3.4A (Ta) 4.5V, 10V 112mOhm @ 3.4A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 1110 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STS5N15F3

STS5N15F3

MOSFET N-CH 150V 5A 8SO

STMicroelectronics
475 -

RFQ

STS5N15F3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 57mOhm @ 2.5A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1300 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR882ADP-T1-GE3

SIR882ADP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
187 -

RFQ

SIR882ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 8.7mOhm @ 20A, 10V 2.8V @ 250µA 60 nC @ 10 V ±20V 1975 pF @ 50 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL17N65M5

STL17N65M5

MOSFET N-CH 650V 1.8A POWERFLAT

STMicroelectronics
941 -

RFQ

STL17N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 1.8A (Ta), 10A (Tc) 10V 374mOhm @ 5.5A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 816 pF @ 100 V - 2.8W (Ta), 70W (Tc) 150°C (TJ) Surface Mount
STL16N60M2

STL16N60M2

MOSFET N-CH 600V 8A POWERFLAT HV

STMicroelectronics
2,377 -

RFQ

STL16N60M2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 355mOhm @ 4A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 704 pF @ 100 V - 52W (Tc) 150°C (TJ) Surface Mount
STL11N65M5

STL11N65M5

MOSFET N-CH 650V 8.5A POWERFLAT

STMicroelectronics
1,608 -

RFQ

STL11N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) 10V 530mOhm @ 4.25A, 10V 5V @ 250µA 17 nC @ 10 V ±25V 644 pF @ 100 V - 70W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCPF165N65S3R0L

FCPF165N65S3R0L

MOSFET N-CH 650V 19A TO220F-3

onsemi
3,740 -

RFQ

FCPF165N65S3R0L

Ficha técnica

Tube SuperFET® III Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 1.9mA 35 nC @ 10 V ±30V 1415 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM8N80CI C0G

TSM8N80CI C0G

MOSFET N-CH 800V 8A ITO220AB

Taiwan Semiconductor Corporation
995 -

RFQ

TSM8N80CI C0G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.05Ohm @ 4A, 10V 4V @ 250µA 41 nC @ 10 V ±30V 1921 pF @ 25 V - 40.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP110N55F6

STP110N55F6

MOSFET N-CH 55V 110A TO220

STMicroelectronics
416 -

RFQ

STP110N55F6

Ficha técnica

Tube DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 5.2mOhm @ 60A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 8350 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP19N40

FDP19N40

MOSFET N-CH 400V 19A TO220-3

onsemi
382 -

RFQ

FDP19N40

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 400 V 19A (Tc) 10V 240mOhm @ 9.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 2115 pF @ 25 V - 215W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4368DY-T1-E3

SI4368DY-T1-E3

MOSFET N-CH 30V 17A 8SO

Vishay Siliconix
5,026 -

RFQ

SI4368DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 3.2mOhm @ 25A, 10V 1.8V @ 250µA 80 nC @ 4.5 V ±12V 8340 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF5804TR

IRF5804TR

MOSFET P-CH 40V 2.5A MICRO6

Infineon Technologies
3,384 -

RFQ

IRF5804TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 2.5A (Ta) 4.5V, 10V 198mOhm @ 2.5A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 680 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF5805TR

IRF5805TR

MOSFET P-CH 30V 3.8A MICRO6

Infineon Technologies
3,743 -

RFQ

IRF5805TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 98mOhm @ 3.8A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 511 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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