Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7450

IRF7450

MOSFET N-CH 200V 2.5A 8SO

Infineon Technologies
3,041 -

RFQ

IRF7450

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.5A (Ta) 10V 170mOhm @ 1.5A, 10V 5.5V @ 250µA 39 nC @ 10 V ±30V 940 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STF45N10F7

STF45N10F7

MOSFET N-CH 100V 30A TO220FP

STMicroelectronics
394 -

RFQ

STF45N10F7

Ficha técnica

Tube DeepGATE™, STripFET™ VII Obsolete N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 10V 18mOhm @ 15A, 10V 4.5V @ 250µA 25 nC @ 10 V 20V 1640 pF @ 50 V - 25W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7433

IRF7433

MOSFET P-CH 12V 8.9A 8SO

Infineon Technologies
3,232 -

RFQ

IRF7433

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8.9A (Ta) 1.8V, 4.5V 24mOhm @ 8.7A, 4.5V 900mV @ 250µA 20 nC @ 4.5 V ±8V 1877 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NP89N04PUK-E1-AY

NP89N04PUK-E1-AY

MOSFET N-CH 40V 90A TO263

Renesas Electronics America Inc
680 -

RFQ

NP89N04PUK-E1-AY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.95mOhm @ 45A, 5V 4V @ 250µA 102 nC @ 10 V ±20V 5850 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) Surface Mount
PSMN1R5-40YSDX

PSMN1R5-40YSDX

MOSFET N-CH 40V 240A LFPAK56

Nexperia USA Inc.
263 -

RFQ

PSMN1R5-40YSDX

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Ta) 10V 1.5mOhm @ 25A, 10V 3.6V @ 1mA 99 nC @ 10 V ±20V 7752 pF @ 20 V Schottky Diode (Body) 238W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF7705

IRF7705

MOSFET P-CH 30V 8A 8TSSOP

Infineon Technologies
3,039 -

RFQ

IRF7705

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 18mOhm @ 8A, 10V 2.5V @ 250µA 88 nC @ 10 V ±20V 2774 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM60N02-3M9P-E3

SUM60N02-3M9P-E3

MOSFET N-CH 20V 60A TO263

Vishay Siliconix
3,775 -

RFQ

SUM60N02-3M9P-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 5950 pF @ 10 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7805A

IRF7805A

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,497 -

RFQ

IRF7805A

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
R8003KND3TL1

R8003KND3TL1

HIGH-SPEED SWITCHING NCH 800V 3A

Rohm Semiconductor
990 -

RFQ

R8003KND3TL1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Ta) 10V 1.8Ohm @ 1.5A, 10V 4.5V @ 2mA 11.5 nC @ 10 V ±20V 300 pF @ 100 V - 45W (Ta) 150°C (TJ) Surface Mount
PSMN6R3-120ESQ

PSMN6R3-120ESQ

MOSFET N-CH 120V 70A I2PAK

Nexperia USA Inc.
439 -

RFQ

PSMN6R3-120ESQ

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 6.7mOhm @ 25A, 10V 4V @ 250µA 207.1 nC @ 10 V ±20V 11384 pF @ 60 V - 405W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7707

IRF7707

MOSFET P-CH 20V 7A 8TSSOP

Infineon Technologies
2,368 -

RFQ

IRF7707

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V 1.2V @ 250µA 47 nC @ 4.5 V ±12V 2361 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB8444

FDB8444

MOSFET N-CH 40V 70A TO263AB

onsemi
275 -

RFQ

FDB8444

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 5.5mOhm @ 70A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8035 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7703

IRF7703

MOSFET P-CH 40V 6A 8TSSOP

Infineon Technologies
3,349 -

RFQ

IRF7703

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 6A (Ta) 4.5V, 10V 28mOhm @ 6A, 10V 3V @ 250µA 62 nC @ 4.5 V ±20V 5220 pF @ 25 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STP11NM65N

STP11NM65N

MOSFET N-CH 650V 11A TO-220

STMicroelectronics
834 -

RFQ

STP11NM65N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 455mOhm @ 5.5A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 800 pF @ 50 V - 110W (Tc) 150°C (TJ) Through Hole
IRFU2407

IRFU2407

MOSFET N-CH 75V 42A IPAK

Infineon Technologies
3,643 -

RFQ

IRFU2407

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
CDM22011-600LRFP SL

CDM22011-600LRFP SL

MOSFET N-CH 600V 11A TO220FP

Central Semiconductor Corp
590 -

RFQ

CDM22011-600LRFP SL

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 23.05 nC @ 10 V 30V 763 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48VS

IRFZ48VS

MOSFET N-CH 60V 72A D2PAK

Infineon Technologies
2,167 -

RFQ

IRFZ48VS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1985 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7465

IRF7465

MOSFET N-CH 150V 1.9A 8SO

Infineon Technologies
3,907 -

RFQ

IRF7465

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 1.9A (Ta) 10V 280mOhm @ 1.14A, 10V 5.5V @ 250µA 15 nC @ 10 V ±30V 330 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7453

IRF7453

MOSFET N-CH 250V 2.2A 8SO

Infineon Technologies
3,035 -

RFQ

IRF7453

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Ta) 10V 230mOhm @ 1.3A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 930 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7477

IRF7477

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,451 -

RFQ

IRF7477

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.5V @ 250µA 38 nC @ 4.5 V ±20V 2710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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