Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL1404S

IRL1404S

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
3,068 -

RFQ

IRL1404S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3704

IRFR3704

MOSFET N-CH 20V 75A DPAK

Infineon Technologies
2,242 -

RFQ

IRFR3704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF10NM60ND

STF10NM60ND

MOSFET N-CH 600V 8A TO220FP

STMicroelectronics
438 -

RFQ

STF10NM60ND

Ficha técnica

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 550mOhm @ 4A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 540 pF @ 50 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7807VD2

IRF7807VD2

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,006 -

RFQ

IRF7807VD2

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±20V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STI45N10F7

STI45N10F7

MOSFET N-CH 100V 45A I2PAK

STMicroelectronics
630 -

RFQ

STI45N10F7

Ficha técnica

Tube DeepGATE™, STripFET™ VII Obsolete N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 10V 18mOhm @ 22.5A, 10V 4.5V @ 250µA 25 nC @ 10 V ±20V 1640 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404L

IRL1404L

MOSFET N-CH 40V 160A TO262

Infineon Technologies
3,302 -

RFQ

IRL1404L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1407STRR

IRF1407STRR

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies
2,491 -

RFQ

IRF1407STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOB66920L

AOB66920L

MOSFET N-CH 100V 22.5A/80A TO263

Alpha & Omega Semiconductor Inc.
775 -

RFQ

AOB66920L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 100 V 22.5A (Ta), 80A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2500 pF @ 50 V - 8.3W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3314STRL

IRF3314STRL

MOSFET N-CH 150V D2PAK

Vishay Siliconix
2,552 -

RFQ

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V - 10V - - - ±20V - - - - Surface Mount
STF6N65K3

STF6N65K3

MOSFET N-CH 650V 5.4A TO220FP

STMicroelectronics
243 -

RFQ

STF6N65K3

Ficha técnica

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 650 V 5.4A (Tc) 10V 1.3Ohm @ 2.8A, 10V 4.5V @ 50µA 35 nC @ 10 V ±30V 880 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
IRF3314STRR

IRF3314STRR

MOSFET N-CH 150V D2PAK

Infineon Technologies
3,286 -

RFQ

IRF3314STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V - 10V - - - ±20V - - - - Surface Mount
RSJ400N06TL

RSJ400N06TL

MOSFET N-CH 60V 40A LPTS

Rohm Semiconductor
133 -

RFQ

RSJ400N06TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 10V 16mOhm @ 40A, 10V 3V @ 1mA 52 nC @ 10 V ±20V 2400 pF @ 10 V - 50W (Tc) 150°C (TJ) Surface Mount
STF7N80K5

STF7N80K5

MOSFET N CH 800V 6A TO220FP

STMicroelectronics
932 -

RFQ

STF7N80K5

Ficha técnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 5V @ 100µA 13.4 nC @ 10 V ±30V 360 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709STRL

IRF3709STRL

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
2,773 -

RFQ

IRF3709STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3709STRR

IRF3709STRR

MOSFET N-CH 30V 90A D2PAK

Infineon Technologies
2,009 -

RFQ

IRF3709STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3711STRL

IRF3711STRL

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,725 -

RFQ

IRF3711STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3711STRR

IRF3711STRR

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
2,599 -

RFQ

IRF3711STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF5800TR

IRF5800TR

MOSFET P-CH 30V 4A MICRO6

Infineon Technologies
3,820 -

RFQ

IRF5800TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 85mOhm @ 4A, 10V 1V @ 250µA 17 nC @ 10 V ±20V 535 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
R8001CND3FRATL

R8001CND3FRATL

MOSFET N-CH 800V 1A TO252

Rohm Semiconductor
475 -

RFQ

R8001CND3FRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 8.7Ohm @ 500mA, 10V 5.5V @ 1mA 7.2 nC @ 10 V ±30V 60 pF @ 25 V - 36W (Tc) 150°C (TJ) Surface Mount
SI7370DP-T1-E3

SI7370DP-T1-E3

MOSFET N-CH 60V 9.6A PPAK SO-8

Vishay Siliconix
2,280 -

RFQ

SI7370DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 9.6A (Ta) 6V, 10V 11mOhm @ 12A, 10V 4V @ 250µA 57 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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