Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI5913DC-T1-GE3

SI5913DC-T1-GE3

MOSFET P-CH 20V 4A 1206-8

Vishay Siliconix
2,593 -

RFQ

SI5913DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 2.5V, 10V 84mOhm @ 3.7A, 10V 1.5V @ 250µA 12 nC @ 10 V ±12V 330 pF @ 10 V Schottky Diode (Isolated) 1.7W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI6443DQ-T1-GE3

SI6443DQ-T1-GE3

MOSFET P-CH 30V 7.3A 8TSSOP

Vishay Siliconix
3,196 -

RFQ

SI6443DQ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7.3A (Ta) 4.5V, 10V 12mOhm @ 8.8A, 10V 3V @ 250µA 60 nC @ 5 V ±20V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6467BDQ-T1-GE3

SI6467BDQ-T1-GE3

MOSFET P-CH 12V 6.8A 8TSSOP

Vishay Siliconix
2,201 -

RFQ

SI6467BDQ-T1-GE3

Ficha técnica

Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 6.8A (Ta) - 12.5mOhm @ 8A, 4.5V 850mV @ 450µA 70 nC @ 4.5 V - - - - - Surface Mount
SI7403BDN-T1-GE3

SI7403BDN-T1-GE3

MOSFET P-CH 20V 8A PPAK1212-8

Vishay Siliconix
3,414 -

RFQ

SI7403BDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 2.5V, 4.5V 74mOhm @ 5.1A, 4.5V 1V @ 250µA 15 nC @ 8 V ±8V 430 pF @ 10 V - 3.1W (Ta), 9.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7454CDP-T1-GE3

SI7454CDP-T1-GE3

MOSFET N-CH 100V 22A PPAK SO-8

Vishay Siliconix
2,470 -

RFQ

SI7454CDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 30.5mOhm @ 10A, 10V 2.8V @ 250µA 19.5 nC @ 10 V ±20V 580 pF @ 50 V - 4.1W (Ta), 29.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7462DP-T1-GE3

SI7462DP-T1-GE3

MOSFET N-CH 200V 2.6A PPAK SO-8

Vishay Siliconix
2,109 -

RFQ

SI7462DP-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Ta) - 130mOhm @ 4.1A, 10V 4V @ 250µA 30 nC @ 10 V - - - - - Surface Mount
SI7621DN-T1-GE3

SI7621DN-T1-GE3

MOSFET P-CH 20V 4A PPAK1212-8

Vishay Siliconix
3,133 -

RFQ

SI7621DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 2.5V, 4.5V 90mOhm @ 3.9A, 4.5V 2V @ 250µA 6.2 nC @ 5 V ±12V 300 pF @ 10 V - 3.1W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7635DP-T1-GE3

SI7635DP-T1-GE3

MOSFET P-CH 20V 40A PPAK SO-8

Vishay Siliconix
3,337 -

RFQ

SI7635DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 4.5V, 10V 4.9mOhm @ 26A, 10V 2.2V @ 250µA 143 nC @ 10 V ±16V 4595 pF @ 10 V - 5W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7703EDN-T1-GE3

SI7703EDN-T1-GE3

MOSFET P-CH 20V 4.3A PPAK1212-8

Vishay Siliconix
3,289 -

RFQ

SI7703EDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 1.8V, 4.5V 48mOhm @ 6.3A, 4.5V 1V @ 800µA 18 nC @ 4.5 V ±12V - Schottky Diode (Isolated) 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7774DP-T1-GE3

SI7774DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
2,433 -

RFQ

SI7774DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 3.8mOhm @ 15A, 10V 2.2V @ 250µA 66 nC @ 10 V ±20V 2630 pF @ 15 V - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8445DB-T2-E1

SI8445DB-T2-E1

MOSFET P-CH 20V 9.8A 4MICROFOOT

Vishay Siliconix
2,298 -

RFQ

SI8445DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.8A (Tc) 1.2V, 4.5V 84mOhm @ 1A, 4.5V 850mV @ 250µA 16 nC @ 5 V ±5V 700 pF @ 10 V - 1.8W (Ta), 11.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8451DB-T2-E1

SI8451DB-T2-E1

MOSFET P-CH 20V 10.8A 6MICROFOOT

Vishay Siliconix
2,190 -

RFQ

SI8451DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 10.8A (Tc) 1.5V, 4.5V 80mOhm @ 1A, 4.5V 1V @ 250µA 24 nC @ 8 V ±8V 750 pF @ 10 V - 2.77W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8461DB-T2-E1

SI8461DB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
2,056 -

RFQ

SI8461DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 1.5V, 4.5V 100mOhm @ 1.5A, 4.5V 1V @ 250µA 24 nC @ 8 V ±8V 610 pF @ 10 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8467DB-T2-E1

SI8467DB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
3,710 -

RFQ

SI8467DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 73mOhm @ 1A, 4.5V 1.5V @ 250µA 21 nC @ 10 V ±12V 475 pF @ 10 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8473EDB-T1-E1

SI8473EDB-T1-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
2,381 -

RFQ

SI8473EDB-T1-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 41mOhm @ 1A, 4.5V 1.5V @ 250µA - ±12V - - 1.1W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8475EDB-T1-E1

SI8475EDB-T1-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
2,774 -

RFQ

SI8475EDB-T1-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.9A (Ta) 2.5V, 4.5V 32mOhm @ 1A, 4.5V 1.5V @ 250µA - ±12V - - 1.1W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA406DJ-T1-GE3

SIA406DJ-T1-GE3

MOSFET N-CH 12V 4.5A PPAK SC70-6

Vishay Siliconix
2,729 -

RFQ

SIA406DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 4.5A (Tc) 1.8V, 4.5V 19.8mOhm @ 10.8A, 4.5V 1V @ 250µA 23 nC @ 5 V ±8V 1380 pF @ 6 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA425EDJ-T1-GE3

SIA425EDJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix
3,324 -

RFQ

SIA425EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 1.8V, 4.5V 60mOhm @ 4.2A, 4.5V 1V @ 250µA - ±12V - - 2.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB455EDK-T1-GE3

SIB455EDK-T1-GE3

MOSFET P-CH 12V 9A PPAK SC75-6

Vishay Siliconix
2,430 -

RFQ

SIB455EDK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9A (Tc) 1.5V, 4.5V 27mOhm @ 5.6A, 4.5V 1V @ 250µA 30 nC @ 8 V ±10V - - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB488DK-T1-GE3

SIB488DK-T1-GE3

MOSFET N-CH 12V 9A PPAK SC75-6

Vishay Siliconix
2,181 -

RFQ

SIB488DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 9A (Tc) 1.8V, 4.5V 20mOhm @ 6.3A, 4.5V 1V @ 250µA 20 nC @ 8 V ±8V 725 pF @ 6 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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