Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHG33N60E-GE3

SIHG33N60E-GE3

MOSFET N-CH 600V 33A TO247AC

Vishay Siliconix
2,163 -

RFQ

SIHG33N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW33N60E-GE3

SIHW33N60E-GE3

MOSFET N-CH 600V 33A TO247AD

Vishay Siliconix
2,903 -

RFQ

SIHW33N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG35N60EF-GE3

SIHG35N60EF-GE3

MOSFET N-CH 600V 32A TO247AC

Vishay Siliconix
3,899 -

RFQ

SIHG35N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG40N60E-GE3

SIHG40N60E-GE3

MOSFET N-CH 600V 40A TO247AC

Vishay Siliconix
3,385 -

RFQ

SIHG40N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 75mOhm @ 20A, 10V 4V @ 250µA 197 nC @ 10 V ±30V 4436 pF @ 100 V - 329W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPF50PBF

IRFPF50PBF

MOSFET N-CH 900V 6.7A TO247-3

Vishay Siliconix
2,276 -

RFQ

IRFPF50PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 6.7A (Tc) 10V 1.6Ohm @ 4A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2900 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG33N65EF-GE3

SIHG33N65EF-GE3

MOSFET N-CH 650V 31.6A TO247AC

Vishay Siliconix
3,301 -

RFQ

SIHG33N65EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 31.6A (Tc) 10V 109mOhm @ 16.5A, 10V 4V @ 250µA 171 nC @ 10 V ±30V 4026 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP21N60LPBF

IRFP21N60LPBF

MOSFET N-CH 600V 21A TO247-3

Vishay Siliconix
3,347 -

RFQ

IRFP21N60LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 320mOhm @ 13A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 4000 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP22N60KPBF

IRFP22N60KPBF

MOSFET N-CH 600V 22A TO247-3

Vishay Siliconix
3,919 -

RFQ

IRFP22N60KPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 280mOhm @ 13A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3570 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG47N60E-GE3

SIHG47N60E-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix
2,238 -

RFQ

SIHG47N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 64mOhm @ 24A, 10V 4V @ 250µA 220 nC @ 10 V ±30V 9620 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG44N65EF-GE3

SIHG44N65EF-GE3

MOSFET N-CH 650V 46A TO247AC

Vishay Siliconix
2,831 -

RFQ

SIHG44N65EF-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 73mOhm @ 22A, 10V 4V @ 250µA 278 nC @ 10 V ±30V 5892 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG47N60EF-GE3

SIHG47N60EF-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix
3,032 -

RFQ

SIHG47N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 67mOhm @ 24A, 10V 4V @ 250µA 225 nC @ 10 V ±30V 4854 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG80N60EF-GE3

SIHG80N60EF-GE3

MOSFET N-CH 600V 80A TO247AC

Vishay Siliconix
2,093 -

RFQ

SIHG80N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 80A (Tc) 10V 32mOhm @ 40A, 10V 4V @ 250µA 400 nC @ 10 V ±30V 6600 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI1039X-T1-GE3

SI1039X-T1-GE3

MOSFET P-CH 12V 870MA SC89-6

Vishay Siliconix
3,619 -

RFQ

SI1039X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 870mA (Ta) 1.8V, 4.5V 165mOhm @ 870mA, 4.5V 450mV @ 250µA (Min) 6 nC @ 4.5 V ±8V - - 170mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1426DH-T1-GE3

SI1426DH-T1-GE3

MOSFET N-CH 30V 2.8A SC70-6

Vishay Siliconix
2,857 -

RFQ

SI1426DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.8A (Ta) 4.5V, 10V 75mOhm @ 3.6A, 10V 2.5V @ 250µA 3 nC @ 4.5 V ±20V - - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1470DH-T1-GE3

SI1470DH-T1-GE3

MOSFET N-CH 30V 5.1A SC70-6

Vishay Siliconix
2,171 -

RFQ

SI1470DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Tc) 2.5V, 4.5V 66mOhm @ 3.8A, 4.5V 1.6V @ 250µA 7.5 nC @ 5 V ±12V 510 pF @ 15 V - 1.5W (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1471DH-T1-GE3

SI1471DH-T1-GE3

MOSFET P-CH 30V 2.7A SC70-6

Vishay Siliconix
2,286 -

RFQ

SI1471DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Tc) 2.5V, 10V 100mOhm @ 2A, 10V 1.6V @ 250µA 9.8 nC @ 4.5 V ±12V 445 pF @ 15 V - 1.5W (Ta), 2.78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1473DH-T1-GE3

SI1473DH-T1-GE3

MOSFET P-CH 30V 2.7A SC70-6

Vishay Siliconix
2,916 -

RFQ

SI1473DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Tc) 4.5V, 10V 100mOhm @ 2A, 10V 3V @ 250µA 6.2 nC @ 4.5 V ±20V 365 pF @ 15 V - 1.5W (Ta), 2.78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1056X-T1-GE3

SI1056X-T1-GE3

MOSFET N-CH 20V SC89-6

Vishay Siliconix
3,583 -

RFQ

SI1056X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.32A (Ta) 1.8V, 4.5V 89mOhm @ 1.32A, 4.5V 950mV @ 250µA 8.7 nC @ 5 V ±8V 400 pF @ 10 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1300BDL-T1-GE3

SI1300BDL-T1-GE3

MOSFET N-CH 20V 400MA SC70-3

Vishay Siliconix
2,854 -

RFQ

SI1300BDL-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 400mA (Tc) 2.5V, 4.5V 850mOhm @ 250mA, 4.5V 1V @ 250µA 0.84 nC @ 4.5 V ±8V 35 pF @ 10 V - 190mW (Ta), 200mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1304BDL-T1-GE3

SI1304BDL-T1-GE3

MOSFET N-CH 30V 900MA SC70-3

Vishay Siliconix
3,520 -

RFQ

SI1304BDL-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 900mA (Tc) 2.5V, 4.5V 270mOhm @ 900mA, 4.5V 1.3V @ 250µA 2.7 nC @ 4.5 V ±12V 100 pF @ 15 V - 340mW (Ta), 370mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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