Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHG22N60AE-GE3

SIHG22N60AE-GE3

MOSFET N-CH 600V 20A TO247AC

Vishay Siliconix
3,471 -

RFQ

SIHG22N60AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP22N60E-GE3

SIHP22N60E-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
2,432 -

RFQ

SIHP22N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB6N60APBF

IRFIB6N60APBF

MOSFET N-CH 600V 5.5A TO220-3

Vishay Siliconix
3,456 -

RFQ

IRFIB6N60APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 750mOhm @ 3.3A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40SPBF

IRFBC40SPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
2,623 -

RFQ

IRFBC40SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG22N60E-E3

SIHG22N60E-E3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix
2,864 -

RFQ

SIHG22N60E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG22N60E-GE3

SIHG22N60E-GE3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix
2,453 -

RFQ

SIHG22N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG16N50C-E3

SIHG16N50C-E3

MOSFET N-CH 500V 16A TO247AC

Vishay Siliconix
2,193 -

RFQ

SIHG16N50C-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP21N65EF-GE3

SIHP21N65EF-GE3

MOSFET N-CH 650V 21A TO220AB

Vishay Siliconix
3,319 -

RFQ

SIHP21N65EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±20V 2322 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG23N60E-GE3

SIHG23N60E-GE3

MOSFET N-CH 600V 23A TO247AC

Vishay Siliconix
2,601 -

RFQ

SIHG23N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TA) Through Hole
SIHP25N60EFL-GE3

SIHP25N60EFL-GE3

MOSFET N-CH 600V 25A TO220AB

Vishay Siliconix
2,137 -

RFQ

SIHP25N60EFL-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM35N30-97_GE3

SQM35N30-97_GE3

MOSFET N-CH 300V 35A TO263

Vishay Siliconix
2,882 -

RFQ

SQM35N30-97_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 300 V 35A (Tc) 10V 97mOhm @ 10A, 10V 3.5V @ 250µA 130 nC @ 10 V ±20V 5650 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHW21N80AE-GE3

SIHW21N80AE-GE3

MOSFET N-CH 800V 17.4A TO247AD

Vishay Siliconix
3,002 -

RFQ

SIHW21N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH20N50E-T1-GE3

SIHH20N50E-T1-GE3

MOSFET N-CH 500V 22A PPAK 8 X 8

Vishay Siliconix
3,026 -

RFQ

SIHH20N50E-T1-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 147mOhm @ 10A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2063 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA17N80E-E3

SIHA17N80E-E3

MOSFET N-CHANNEL 800V 15A TO220

Vishay Siliconix
2,313 -

RFQ

SIHA17N80E-E3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPF30PBF

IRFPF30PBF

MOSFET N-CH 900V 3.6A TO247-3

Vishay Siliconix
3,410 -

RFQ

IRFPF30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP048RPBF

IRFP048RPBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix
2,113 -

RFQ

IRFP048RPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 18mOhm @ 44A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG25N60EFL-GE3

SIHG25N60EFL-GE3

MOSFET N-CH 600V 25A TO247AC

Vishay Siliconix
3,241 -

RFQ

SIHG25N60EFL-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB21N80AE-GE3

SIHB21N80AE-GE3

MOSFET N-CH 800V 17.4A D2PAK

Vishay Siliconix
3,616 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA120N60E-GE3

SIHA120N60E-GE3

MOSFET N-CH 600V 25A TO220

Vishay Siliconix
3,534 -

RFQ

SIHA120N60E-GE3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPG30PBF

IRFPG30PBF

MOSFET N-CH 1000V 3.1A TO247-3

Vishay Siliconix
3,445 -

RFQ

IRFPG30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 4747 Record«Prev1... 105106107108109110111112...238Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário