Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQD40N10-25_GE3

SQD40N10-25_GE3

MOSFET N-CH 100V 40A TO252

Vishay Siliconix
2,000 -

RFQ

SQD40N10-25_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 25mOhm @ 40A, 10V 2.5V @ 250µA 70 nC @ 10 V ±20V 3380 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHG17N80E-GE3

SIHG17N80E-GE3

MOSFET N-CH 800V 15A TO247AC

Vishay Siliconix
2,219 -

RFQ

SIHG17N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB068N60EF-GE3

SIHB068N60EF-GE3

MOSFET N-CH 600V 41A D2PAK

Vishay Siliconix
2,403 -

RFQ

SIHB068N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP24N65E-GE3

SIHP24N65E-GE3

MOSFET N-CH 650V 24A TO220AB

Vishay Siliconix
3,189 -

RFQ

SIHP24N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG24N65EF-GE3

SIHG24N65EF-GE3

MOSFET N-CH 650V 24A TO247AC

Vishay Siliconix
3,396 -

RFQ

SIHG24N65EF-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP30N60E-GE3

SIHP30N60E-GE3

MOSFET N-CH 600V 29A TO220AB

Vishay Siliconix
2,449 -

RFQ

SIHP30N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB24N65EF-GE3

SIHB24N65EF-GE3

MOSFET N-CH 650V 24A D2PAK

Vishay Siliconix
2,997 -

RFQ

SIHB24N65EF-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7860ADP-T1-E3

SI7860ADP-T1-E3

MOSFET N-CH 30V 11A PPAK SO-8

Vishay Siliconix
3,503 -

RFQ

SI7860ADP-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 9.5mOhm @ 16A, 10V 3V @ 250µA 18 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2303BDS-T1

SI2303BDS-T1

MOSFET P-CH 30V 1.49A SOT23-3

Vishay Siliconix
2,325 -

RFQ

SI2303BDS-T1

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 1.49A (Ta) 4.5V, 10V 200mOhm @ 1.7A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 180 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2343DS-T1

SI2343DS-T1

MOSFET P-CH 30V 3.1A SOT23-3

Vishay Siliconix
3,116 -

RFQ

SI2343DS-T1

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 4.5V, 10V 53mOhm @ 4A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 540 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2302ADS-T1

SI2302ADS-T1

MOSFET N-CH 20V 2.1A SOT23-3

Vishay Siliconix
2,603 -

RFQ

SI2302ADS-T1

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.1A (Ta) 2.5V, 4.5V 60mOhm @ 3.6A, 4.5V 1.2V @ 50µA 10 nC @ 4.5 V ±8V 300 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2323DS-T1

SI2323DS-T1

MOSFET P-CH 20V 3.7A SOT23-3

Vishay Siliconix
3,671 -

RFQ

SI2323DS-T1

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 1.8V, 4.5V 39mOhm @ 4.7A, 4.5V 1V @ 250µA 19 nC @ 4.5 V ±8V 1020 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TP0610K-T1

TP0610K-T1

MOSFET P-CH 60V 185MA SOT23-3

Vishay Siliconix
2,543 -

RFQ

TP0610K-T1

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 185mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V 3V @ 250µA 1.7 nC @ 15 V ±20V 23 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002E

2N7002E

MOSFET N-CH 60V 240MA SOT23-3

Vishay Siliconix
3,705 -

RFQ

2N7002E

Ficha técnica

Bulk - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 4.5V, 10V 3Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 21 pF @ 5 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP33N60EF-GE3

SIHP33N60EF-GE3

MOSFET N-CH 600V 33A TO220AB

Vishay Siliconix
2,851 -

RFQ

SIHP33N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 98mOhm @ 16.5A, 10V 4V @ 250µA 155 nC @ 10 V ±30V 3454 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPC50PBF

IRFPC50PBF

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix
2,797 -

RFQ

IRFPC50PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 600mOhm @ 6A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2700 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP38N60E-GE3

SIHP38N60E-GE3

MOSFET N-CH 600V 43A TO220AB

Vishay Siliconix
2,576 -

RFQ

SIHP38N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 10V 65mOhm @ 19A, 10V 4V @ 250µA 183 nC @ 10 V ±30V 3600 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPC60LCPBF

IRFPC60LCPBF

MOSFET N-CH 600V 16A TO247-3

Vishay Siliconix
3,172 -

RFQ

IRFPC60LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 400mOhm @ 9.6A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3500 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP85N10-10-E3

SUP85N10-10-E3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix
3,616 -

RFQ

SUP85N10-10-E3

Ficha técnica

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG35N60E-GE3

SIHG35N60E-GE3

MOSFET N-CH 600V 32A TO247AC

Vishay Siliconix
3,971 -

RFQ

SIHG35N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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