Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHA15N65E-GE3

SIHA15N65E-GE3

MOSFET N-CHANNEL 650V 15A TO220

Vishay Siliconix
3,482 -

RFQ

SIHA15N65E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 2460 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30SPBF

IRFBE30SPBF

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
2,345 -

RFQ

IRFBE30SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP23N60E-GE3

SIHP23N60E-GE3

MOSFET N-CH 600V 23A TO220AB

Vishay Siliconix
3,411 -

RFQ

SIHP23N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG14N50D-GE3

SIHG14N50D-GE3

MOSFET N-CH 500V 14A TO247AC

Vishay Siliconix
3,957 -

RFQ

SIHG14N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 1144 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG15N60E-GE3

SIHG15N60E-GE3

MOSFET N-CH 600V 15A TO247AC

Vishay Siliconix
3,547 -

RFQ

SIHG15N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90140E-GE3

SUP90140E-GE3

MOSFET N-CH 200V 90A TO220AB

Vishay Siliconix
2,537 -

RFQ

SUP90140E-GE3

Ficha técnica

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 7.5V, 10V 17mOhm @ 30A, 10V 4V @ 250µA 96 nC @ 10 V ±20V 4132 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP440PBF

IRFP440PBF

MOSFET N-CH 500V 8.8A TO247-3

Vishay Siliconix
2,377 -

RFQ

IRFP440PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.8A (Tc) 10V 850mOhm @ 5.3A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU024PBF

IRLU024PBF

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
2,275 -

RFQ

IRLU024PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP11N80E-GE3

SIHP11N80E-GE3

MOSFET N-CH 800V 12A TO220AB

Vishay Siliconix
3,869 -

RFQ

SIHP11N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP15N65E-GE3

SIHP15N65E-GE3

MOSFET N-CH 650V 15A TO220AB

Vishay Siliconix
3,215 -

RFQ

SIHP15N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH120N60E-T1-GE3

SIHH120N60E-T1-GE3

MOSFET N-CH 600V 24A PPAK 8 X 8

Vishay Siliconix
2,356 -

RFQ

SIHH120N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 44 nC @ 10 V ±30V 1600 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60EF-GE3

SIHP22N60EF-GE3

MOSFET N-CH 600V 19A TO220AB

Vishay Siliconix
2,190 -

RFQ

SIHP22N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB22N60EF-GE3

SIHB22N60EF-GE3

MOSFET N-CH 600V 19A D2PAK

Vishay Siliconix
2,968 -

RFQ

SIHB22N60EF-GE3

Ficha técnica

Bulk EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFSL11N50APBF

IRFSL11N50APBF

MOSFET N-CH 500V 11A TO262-3

Vishay Siliconix
3,430 -

RFQ

IRFSL11N50APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1426 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI7738DP-T1-E3

SI7738DP-T1-E3

MOSFET N-CH 150V 30A PPAK SO-8

Vishay Siliconix
2,293 -

RFQ

SI7738DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Tc) 10V 38mOhm @ 7.7A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2100 pF @ 75 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG25N50E-GE3

SIHG25N50E-GE3

MOSFET N-CH 500V 26A TO247AC

Vishay Siliconix
3,356 -

RFQ

SIHG25N50E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB33N60ET1-GE3

SIHB33N60ET1-GE3

MOSFET N-CH 600V 33A TO263

Vishay Siliconix
2,809 -

RFQ

SIHB33N60ET1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA22N60E-E3

SIHA22N60E-E3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix
3,011 -

RFQ

SIHA22N60E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG22N50D-E3

SIHG22N50D-E3

MOSFET N-CH 500V 22A TO247AC

Vishay Siliconix
2,654 -

RFQ

SIHG22N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 11A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 1938 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP21N60EF-GE3

SIHP21N60EF-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
3,058 -

RFQ

SIHP21N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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