Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHF8N50D-E3

SIHF8N50D-E3

MOSFET N-CH 500V 8.7A TO220

Vishay Siliconix
3,245 -

RFQ

SIHF8N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820ASPBF

IRF820ASPBF

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
2,001 -

RFQ

IRF820ASPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840STRRPBF

IRF840STRRPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,520 -

RFQ

IRF840STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF630SPBF

IRF630SPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,598 -

RFQ

IRF630SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF530SPBF

IRF530SPBF

MOSFET N-CH 100V 14A TO263

Vishay Siliconix
2,908 -

RFQ

IRF530SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHD4N80E-GE3

SIHD4N80E-GE3

MOSFET N-CH 800V 4.3A DPAK

Vishay Siliconix
2,747 -

RFQ

SIHD4N80E-GE3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40N15-38_GE3

SQM40N15-38_GE3

MOSFET N-CH 150V 40A TO263

Vishay Siliconix
2,871 -

RFQ

SQM40N15-38_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 40A (Tc) 6V, 10V 38mOhm @ 15A, 10V 3.5V @ 250µA 70 nC @ 10 V ±20V 3390 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR320PBF

IRFR320PBF

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix
3,287 -

RFQ

IRFR320PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF624PBF

IRF624PBF

MOSFET N-CH 250V 4.4A TO220AB

Vishay Siliconix
2,774 -

RFQ

IRF624PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7192DP-T1-GE3

SI7192DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
2,313 -

RFQ

SI7192DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 5800 pF @ 15 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM50020E-GE3

SUM50020E-GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix
3,688 -

RFQ

SUM50020E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 7.5V, 10V 2.2mOhm @ 30A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 11150 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM40010EL_GE3

SQM40010EL_GE3

MOSFET N-CH 40V 120A D2PAK

Vishay Siliconix
3,194 -

RFQ

SQM40010EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2.5V @ 250µA 230 nC @ 10 V ±20V 17100 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM40016EM_GE3

SQM40016EM_GE3

MOSFET N-CH 40V 250A TO263-7

Vishay Siliconix
2,475 -

RFQ

SQM40016EM_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 250A (Tc) 10V 1mOhm @ 40A, 10V 3.5V @ 250µA 245 nC @ 10 V ±20V 15000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM120N06-06_GE3

SQM120N06-06_GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix
3,309 -

RFQ

SQM120N06-06_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 6mOhm @ 30A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 6495 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS11N50ATRRP

IRFS11N50ATRRP

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix
3,119 -

RFQ

IRFS11N50ATRRP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF820ALPBF

IRF820ALPBF

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix
2,997 -

RFQ

IRF820ALPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD420PBF

IRFD420PBF

MOSFET N-CH 500V 370MA 4DIP

Vishay Siliconix
2,874 -

RFQ

IRFD420PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 370mA (Ta) 10V 3Ohm @ 220mA, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
SQM40014EM_GE3

SQM40014EM_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix
2,819 -

RFQ

SQM40014EM_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1mOhm @ 35A, 10V 3.5V @ 250µA 250 nC @ 10 V ±20V 15525 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4840EY-T1_GE3

SQ4840EY-T1_GE3

MOSFET N-CH 40V 20.7A 8SO

Vishay Siliconix
3,191 -

RFQ

SQ4840EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20.7A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.5V @ 250µA 62 nC @ 10 V ±20V 2440 pF @ 20 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ4840EY-T1_BE3

SQ4840EY-T1_BE3

MOSFET N-CH 40V 20.7A 8SOIC

Vishay Siliconix
3,498 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20.7A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.5V @ 250µA 62 nC @ 10 V ±20V 2440 pF @ 20 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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