Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU320PBF

IRFU320PBF

MOSFET N-CH 400V 3.1A TO251AA

Vishay Siliconix
1,499 -

RFQ

IRFU320PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840ASTRLPBF

IRF840ASTRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
3,785 -

RFQ

IRF840ASTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ14SPBF

IRFZ14SPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
3,456 -

RFQ

IRFZ14SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI614GPBF

IRFI614GPBF

MOSFET N-CH 250V 2.1A TO220-3

Vishay Siliconix
2,623 -

RFQ

IRFI614GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.1A (Tc) 10V 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM60N06-15_GE3

SQM60N06-15_GE3

MOSFET N-CH 60V 56A TO263

Vishay Siliconix
3,898 -

RFQ

SQM60N06-15_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 15mOhm @ 30A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 2480 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ10PBF

IRFZ10PBF

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
3,702 -

RFQ

IRFZ10PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU224PBF

IRFU224PBF

MOSFET N-CH 250V 3.8A TO251AA

Vishay Siliconix
2,819 -

RFQ

IRFU224PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 3.8A (Tc) 10V 1.1Ohm @ 2.3A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUD19N20-90-BE3

SUD19N20-90-BE3

MOSFET N-CH 200V 19A DPAK

Vishay Siliconix
2,491 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 6V, 10V 90mOhm @ 5A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1800 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL630STRRPBF

IRL630STRRPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
3,486 -

RFQ

IRL630STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU420APBF

IRFU420APBF

MOSFET N-CH 500V 3.3A TO251AA

Vishay Siliconix
3,955 -

RFQ

IRFU420APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3.3A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9620STRLPBF

IRF9620STRLPBF

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix
3,320 -

RFQ

IRF9620STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ404E-T1_GE3

SQJQ404E-T1_GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix
3,705 -

RFQ

SQJQ404E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.72mOhm @ 20A, 10V 3.5V @ 250µA 270 nC @ 10 V ±20V 16480 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFUC20PBF

IRFUC20PBF

MOSFET N-CH 600V 2A TO251AA

Vishay Siliconix
3,641 -

RFQ

IRFUC20PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF710SPBF

IRF710SPBF

MOSFET N-CH 400V 2A D2PAK

Vishay Siliconix
2,327 -

RFQ

IRF710SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP6N40D-E3

SIHP6N40D-E3

MOSFET N-CH 400V 6A TO220AB

Vishay Siliconix
2,518 -

RFQ

SIHP6N40D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD6N65E-GE3

SIHD6N65E-GE3

MOSFET N-CH 650V 7A DPAK

Vishay Siliconix
3,610 -

RFQ

SIHD6N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD310PBF

IRFD310PBF

MOSFET N-CH 400V 350MA 4DIP

Vishay Siliconix
2,725 -

RFQ

IRFD310PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
SIHD690N60E-GE3

SIHD690N60E-GE3

MOSFET N-CH 600V 6.4A DPAK

Vishay Siliconix
2,510 -

RFQ

SIHD690N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 6.4A (Tc) 10V 700mOhm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 347 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ24PBF

IRFZ24PBF

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
2,586 -

RFQ

IRFZ24PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHU6N62E-GE3

SIHU6N62E-GE3

MOSFET N-CH 620V 6A IPAK

Vishay Siliconix
3,401 -

RFQ

SIHU6N62E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 620 V 6A (Tc) 10V 900mOhm @ 3A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 578 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 4747 Record«Prev1... 99100101102103104105106...238Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário