Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF634STRRPBF

IRF634STRRPBF

MOSFET N-CH 250V 8.1A D2PAK

Vishay Siliconix
3,999 -

RFQ

IRF634STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR104ADP-T1-RE3

SIDR104ADP-T1-RE3

MOSFET N-CH 100V 18.8A/81A PPAK

Vishay Siliconix
3,902 -

RFQ

SIDR104ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18.8A (Ta), 81A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM50034EL_GE3

SQM50034EL_GE3

MOSFET N-CH 60V 100A TO263

Vishay Siliconix
3,514 -

RFQ

SQM50034EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V 2.5V @ 250µA 90 nC @ 10 V ±20V 6100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR390DP-T1-RE3

SIDR390DP-T1-RE3

MOSFET N-CH 30V 69.9A/100A PPAK

Vishay Siliconix
3,425 -

RFQ

SIDR390DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 69.9A (Ta), 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40022EM_GE3

SQM40022EM_GE3

MOSFET N-CH 40V 150A TO263-7

Vishay Siliconix
2,932 -

RFQ

SQM40022EM_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 1.63mOhm @ 35A, 10V 3.5V @ 250µA 160 nC @ 10 V ±20V 9200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU420PBF

IRFU420PBF

MOSFET N-CH 500V 2.4A TO251AA

Vishay Siliconix
2,169 -

RFQ

IRFU420PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUD50P10-43L-BE3

SUD50P10-43L-BE3

MOSFET P-CH 100V 9.2A/37.1A DPAK

Vishay Siliconix
2,629 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 9.2A (Ta), 37.1A (Tc) 4.5V, 10V 43mOhm @ 9.2A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4600 pF @ 50 V - 8.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF5N50D-E3

SIHF5N50D-E3

MOSFET N-CH 500V 5.3A TO220

Vishay Siliconix
3,662 -

RFQ

SIHF5N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF6N40D-E3

SIHF6N40D-E3

MOSFET N-CH 400V 6A TO220

Vishay Siliconix
2,477 -

RFQ

SIHF6N40D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 311 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820PBF-BE3

IRF820PBF-BE3

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix
2,775 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD50P03-07_GE3

SQD50P03-07_GE3

MOSFET P-CH 30V 50A TO252AA

Vishay Siliconix
3,126 -

RFQ

SQD50P03-07_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.5V @ 250µA 146 nC @ 10 V ±20V 5490 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF730STRLPBF

IRF730STRLPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,137 -

RFQ

IRF730STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD2N80E-GE3

SIHD2N80E-GE3

MOSFET N-CH 800V 2.8A DPAK

Vishay Siliconix
3,957 -

RFQ

SIHD2N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 2.75Ohm @ 1A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 315 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix
3,818 -

RFQ

SQJQ402E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V 2.5V @ 250µA 260 nC @ 10 V ±20V 13500 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR014PBF

IRFR014PBF

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
3,928 -

RFQ

IRFR014PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM50034E_GE3

SQM50034E_GE3

MOSFET N-CH 60V 100A TO263

Vishay Siliconix
3,733 -

RFQ

SQM50034E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.9mOhm @ 20A, 10V 3.5V @ 250µA 90 nC @ 10 V ±20V 6600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHB10N40D-GE3

SIHB10N40D-GE3

MOSFET N-CH 400V 10A TO263

Vishay Siliconix
3,341 -

RFQ

SIHB10N40D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ100EL-T1_GE3

SQJQ100EL-T1_GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix
3,570 -

RFQ

SQJQ100EL-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.5V @ 250µA 220 nC @ 10 V ±20V 14500 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU310PBF

IRFU310PBF

MOSFET N-CH 400V 1.7A TO251AA

Vishay Siliconix
3,400 -

RFQ

IRFU310PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD224PBF

IRFD224PBF

MOSFET N-CH 250V 630MA 4DIP

Vishay Siliconix
2,985 -

RFQ

IRFD224PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 630mA (Ta) 10V 1.1Ohm @ 380mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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