Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7112DN-T1-E3

SI7112DN-T1-E3

MOSFET N-CH 30V 11.3A PPAK1212-8

Vishay Siliconix
2,441 -

RFQ

SI7112DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Tc) 4.5V, 10V 7.5mOhm @ 17.8A, 10V 1.5V @ 250µA 27 nC @ 4.5 V ±12V 2610 pF @ 15 V - 1.5W (Ta) -50°C ~ 150°C (TJ) Surface Mount
IRL510STRLPBF

IRL510STRLPBF

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
2,691 -

RFQ

IRL510STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFRC20TRLPBF

IRFRC20TRLPBF

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix
3,379 -

RFQ

IRFRC20TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40061EL_GE3

SQM40061EL_GE3

MOSFET P-CH 40V 100A TO263

Vishay Siliconix
3,985 -

RFQ

SQM40061EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 5.1mOhm @ 30A, 10V 2.5V @ 250µA 280 nC @ 10 V ±20V 14500 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHU6N80AE-GE3

SIHU6N80AE-GE3

MOSFET N-CH 800V 5A TO251AA

Vishay Siliconix
2,624 -

RFQ

SIHU6N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD3N50D-GE3

SIHD3N50D-GE3

MOSFET N-CH 500V 3A TO252AA

Vishay Siliconix
3,052 -

RFQ

SIHD3N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 2.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD3N50D-BE3

SIHD3N50D-BE3

MOSFET N-CH 500V 3A DPAK

Vishay Siliconix
2,861 -

RFQ

Tube D Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 1.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQR40020ER_GE3

SQR40020ER_GE3

MOSFET N-CH 40V 100A TO252 REV

Vishay Siliconix
2,347 -

RFQ

SQR40020ER_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.33mOhm @ 20A, 10V 3.5V @ 250µA 130 nC @ 10 V ±20V 8000 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7636DP-T1-E3

SI7636DP-T1-E3

MOSFET N-CH 30V 17A PPAK SO-8

Vishay Siliconix
2,487 -

RFQ

SI7636DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 4mOhm @ 25A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 5600 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4430BDY-T1-GE3

SI4430BDY-T1-GE3

MOSFET N-CH 30V 14A 8SO

Vishay Siliconix
3,677 -

RFQ

SI4430BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V 3V @ 250µA 36 nC @ 4.5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ4050EY-T1_BE3

SQ4050EY-T1_BE3

MOSFET N-CHANNEL 40V 19A 8SOIC

Vishay Siliconix
2,500 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Tc) 4.5V, 10V 8mOhm @ 10A, 10V 2.5V @ 250µA 51 nC @ 10 V ±20V 2406 pF @ 20 V - 6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD100N03-3M2L_GE3

SQD100N03-3M2L_GE3

MOSFET N-CH 30V 100A TO252AA

Vishay Siliconix
3,582 -

RFQ

SQD100N03-3M2L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3.2mOhm @ 20A, 10V 2.5V @ 250µA 116 nC @ 10 V ±20V 6316 pF @ 15 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7464DP-T1-E3

SI7464DP-T1-E3

MOSFET N-CH 200V 1.8A PPAK SO-8

Vishay Siliconix
2,971 -

RFQ

SI7464DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 1.8A (Ta) 6V, 10V 240mOhm @ 2.8A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIS402DN-T1-GE3

SIS402DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
3,426 -

RFQ

SIS402DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6mOhm @ 19A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1700 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7464DP-T1-GE3

SI7464DP-T1-GE3

MOSFET N-CH 200V 1.8A PPAK SO-8

Vishay Siliconix
2,215 -

RFQ

SI7464DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 1.8A (Ta) 6V, 10V 240mOhm @ 2.8A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR180ADP-T1-RE3

SIR180ADP-T1-RE3

MOSFET N-CH 60V PPAK SO-8

Vishay Siliconix
3,946 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 137A (Tc) 7.5V, 10V 2.2mOhm @ 10A, 10V 3.6V @ 250µA 70 nC @ 10 V ±20V 3280 pF @ 30 V - 5.4W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS67DN-T1-GE3

SISS67DN-T1-GE3

MOSFET P-CH 30V 60A PPAK1212-8S

Vishay Siliconix
2,567 -

RFQ

SISS67DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 5.5mOhm @ 15A, 10V 2.5V @ 250µA 111 nC @ 10 V ±25V 4380 pF @ 15 V - 65.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM90330E-GE3

SUM90330E-GE3

MOSFET N-CH 200V 35.1A TO263

Vishay Siliconix
3,293 -

RFQ

SUM90330E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 35.1A (Tc) 7.5V, 10V 37.5mOhm @ 12.2A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1172 pF @ 100 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF710STRLPBF

IRF710STRLPBF

MOSFET N-CH 400V 2A D2PAK

Vishay Siliconix
2,587 -

RFQ

IRF710STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU2N80AE-GE3

SIHU2N80AE-GE3

MOSFET N-CH 800V 2.9A TO251AA

Vishay Siliconix
2,396 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 2.9A (Tc) 10V 2.9Ohm @ 500mA, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 180 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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