Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SISH129DN-T1-GE3

SISH129DN-T1-GE3

MOSFET P-CH 30V 14.4A/35A PPAK

Vishay Siliconix
3,613 -

RFQ

SISH129DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 14.4A (Ta), 35A (Tc) 4.5V, 10V 11.4mOhm @ 14.4A, 10V 2.8V @ 250µA 71 nC @ 10 V ±20V 3345 pF @ 15 V - 3.8W (Ta), 52.1W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SISH402DN-T1-GE3

SISH402DN-T1-GE3

MOSFET N-CH 30V 19A/35A PPAK

Vishay Siliconix
2,717 -

RFQ

SISH402DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 35A (Tc) 4.5V, 10V 6mOhm @ 19A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1700 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ474EP-T1_GE3

SQJ474EP-T1_GE3

MOSFET N-CH 100V 26A PPAK SO-8

Vishay Siliconix
3,491 -

RFQ

SQJ474EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tc) 4.5V, 10V 30mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1100 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ868EP-T1_GE3

SQJ868EP-T1_GE3

MOSFET N-CH 40V 58A PPAK SO-8

Vishay Siliconix
3,471 -

RFQ

SQJ868EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Tc) 10V 7.35mOhm @ 14A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2450 pF @ 20 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4850BDY-T1-GE3

SI4850BDY-T1-GE3

MOSFET N-CH 60V 8.4A/11.3A 8SO

Vishay Siliconix
2,883 -

RFQ

SI4850BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 8.4A (Ta), 11.3A (Tc) 4.5V, 10V 19.5mOhm @ 10A, 10V 2.8V @ 250µA 17 nC @ 10 V ±20V 790 pF @ 30 V - 2.5W (Ta), 4.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD23N06-31L-T4BE3

SUD23N06-31L-T4BE3

MOSFET N-CH 60V 9.1A/21.4A DPAK

Vishay Siliconix
2,004 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 9.1A (Ta), 21.4A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 670 pF @ 25 V - 5.7W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR110TRPBF-BE3

IRFR110TRPBF-BE3

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
2,084 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7119DN-T1-E3

SI7119DN-T1-E3

MOSFET P-CH 200V 3.8A PPAK1212-8

Vishay Siliconix
3,904 -

RFQ

SI7119DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 3.8A (Tc) 6V, 10V 1.05Ohm @ 1A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 666 pF @ 50 V - 3.7W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SQ4005EY-T1_BE3

SQ4005EY-T1_BE3

MOSFET P-CHANNEL 12V 15A 8SOIC

Vishay Siliconix
2,630 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 15A (Tc) 2.5V, 4.5V 22mOhm @ 13.5A, 4.5V 1V @ 250µA 38 nC @ 4.5 V ±8V 3600 pF @ 6 V - 6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRA74DP-T1-GE3

SIRA74DP-T1-GE3

MOSFET N-CH 40V 24A/81.2A PPAK

Vishay Siliconix
3,346 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 81.2A (Tc) 4.5V, 10V 4.2mOhm @ 10A, 10V 2.4V @ 250µA 41 nC @ 10 V +20V, -16V 2000 pF @ 20 V - 4.1W (Ta), 46.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA32DP-T1-RE3

SIRA32DP-T1-RE3

MOSFET N-CH 25V 60A PPAK SO-8

Vishay Siliconix
2,151 -

RFQ

SIRA32DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.2mOhm @ 15A, 10V 2.2V @ 250µA 83 nC @ 10 V +16V, -12V 4450 pF @ 10 V - 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8410DB-T2-E1

SI8410DB-T2-E1

MOSFET N-CH 20V 4MICRO FOOT

Vishay Siliconix
2,243 -

RFQ

SI8410DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 3.8A (Ta) 1.5V, 4.5V 37mOhm @ 1.5A, 4.5V 850mV @ 250µA 16 nC @ 8 V ±8V 620 pF @ 10 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA34EP-T1_GE3

SQJA34EP-T1_GE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix
3,133 -

RFQ

SQJA34EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.3mOhm @ 10A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 2800 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS405ENW-T1_GE3

SQS405ENW-T1_GE3

MOSFET P-CH 12V 16A PPAK1212-8

Vishay Siliconix
2,412 -

RFQ

SQS405ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 16A (Tc) 2.5V, 4.5V 20mOhm @ 13.5A, 4.5V 1V @ 250µA 75 nC @ 8 V ±8V 2650 pF @ 6 V - 39W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISS08DN-T1-GE3

SISS08DN-T1-GE3

MOSFET N-CH 25V 53.9/195.5A PPAK

Vishay Siliconix
2,719 -

RFQ

SISS08DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 53.9A (Ta), 195.5A (Tc) 4.5V, 10V 1.23mOhm @ 15A, 10V 2.2V @ 250µA 82 nC @ 10 V +20V, -16V 3670 pF @ 12.5 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS06DN-T1-GE3

SISS06DN-T1-GE3

MOSFET N-CH 30V 47.6/172.6A PPAK

Vishay Siliconix
2,934 -

RFQ

SISS06DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 47.6A (Ta), 172.6A (Tc) 4.5V, 10V 1.38mOhm @ 15A, 10V 2.2V @ 250µA 77 nC @ 10 V +20V, -16V 3660 pF @ 15 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8401DB-T1-E1

SI8401DB-T1-E1

MOSFET P-CH 20V 3.6A 4MICROFOOT

Vishay Siliconix
2,897 -

RFQ

SI8401DB-T1-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 65mOhm @ 1A, 4.5V 1.4V @ 250µA 17 nC @ 4.5 V ±12V - - 1.47W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJA06EP-T1_GE3

SQJA06EP-T1_GE3

MOSFET N-CH 60V 57A PPAK SO-8

Vishay Siliconix
2,985 -

RFQ

SQJA06EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 8.7mOhm @ 10A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 2800 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD70140EL_GE3

SQD70140EL_GE3

MOSFET N-CH 100V 30A TO252AA

Vishay Siliconix
3,564 -

RFQ

SQD70140EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 4.5V, 10V 15mOhm @ 30A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 2100 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7686DP-T1-E3

SI7686DP-T1-E3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix
2,442 -

RFQ

SI7686DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 5W (Ta), 37.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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