Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQJA02EP-T1_GE3

SQJA02EP-T1_GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
3,865 -

RFQ

SQJA02EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 4.8mOhm @ 10A, 10V 3.5V @ 250µA 80 nC @ 10 V ±20V 4700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA76EP-T1_GE3

SQJA76EP-T1_GE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix
3,287 -

RFQ

SQJA76EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2.4mOhm @ 10A, 10V 3.5V @ 250µA 100 nC @ 10 V ±20V 5250 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA42EP-T1_GE3

SQJA42EP-T1_GE3

MOSFET N-CH 40V 20A PPAK SO-8

Vishay Siliconix
2,838 -

RFQ

SQJA42EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Tc) 4.5V, 10V 9.4mOhm @ 6A, 10V 2.3V @ 250µA 33 nC @ 10 V ±20V 1700 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

MOSFET N-CH 100V 9.4A/35.3A PPAK

Vishay Siliconix
2,741 -

RFQ

SIS606BDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 35.3A (Tc) 7.5V, 10V 17.4mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1470 pF @ 50 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJ462DP-T1-GE3

SIJ462DP-T1-GE3

MOSFET N-CH 60V 46.5A PPAK SO-8

Vishay Siliconix
3,079 -

RFQ

SIJ462DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 46.5A(Tc) - 8mOhm @ 20A, 10V 2.5V @ 250µA 32 nC @ 10 V - 1400 pF @ 30 V - - - Surface Mount
SIR188DP-T1-RE3

SIR188DP-T1-RE3

MOSFET N-CH 60V 25.5A/60A PPAK

Vishay Siliconix
2,615 -

RFQ

SIR188DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 25.5A (Ta), 60A (Tc) 7.5V, 10V 3.85mOhm @ 10A, 10V 3.6V @ 250µA 44 nC @ 10 V ±20V 1920 pF @ 30 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7810DN-T1-GE3

SI7810DN-T1-GE3

MOSFET N-CH 100V 3.4A PPAK1212-8

Vishay Siliconix
3,351 -

RFQ

SI7810DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 3.4A (Ta) 6V, 10V 62mOhm @ 5.4A, 10V 4.5V @ 250µA 17 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ4483EY-T1_GE3

SQ4483EY-T1_GE3

MOSFET P-CHANNEL 30V 30A 8SOIC

Vishay Siliconix
3,238 -

RFQ

SQ4483EY-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 4500 pF @ 15 V - 7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4463BDY-T1-GE3

SI4463BDY-T1-GE3

MOSFET P-CH 20V 9.8A 8SO

Vishay Siliconix
2,458 -

RFQ

SI4463BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 9.8A (Ta) 2.5V, 10V 11mOhm @ 13.7A, 10V 1.4V @ 250µA 56 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJ460AEP-T1_GE3

SQJ460AEP-T1_GE3

MOSFET N-CH 60V 32A PPAK SO-8

Vishay Siliconix
3,368 -

RFQ

SQJ460AEP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 4.5V, 10V 9.6mOhm @ 18A, 10V 2.5V @ 250µA 106 nC @ 10 V ±20V 4795 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR310TRLPBF

IRFR310TRLPBF

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
3,227 -

RFQ

IRFR310TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7106DN-T1-GE3

SI7106DN-T1-GE3

MOSFET N-CH 20V 12.5A PPAK1212-8

Vishay Siliconix
3,737 -

RFQ

SI7106DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) 2.5V, 4.5V 6.2mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQD25N06-22L_T4GE3

SQD25N06-22L_T4GE3

MOSFET N-CH 60V 25A TO252AA

Vishay Siliconix
3,809 -

RFQ

SQD25N06-22L_T4GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 22mOhm @ 20A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 1975 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR120TRPBF

IRFR120TRPBF

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
2,034 -

RFQ

IRFR120TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR882BDP-T1-RE3

SIR882BDP-T1-RE3

MOSFET N-CH 100V 16.5/67.5A PPAK

Vishay Siliconix
3,778 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 16.5A (Ta), 67.5A (Tc) 4.5V, 10V 8.3mOhm @ 15A, 10V 2.3V @ 250µA 81 nC @ 10 V ±20V 3762 pF @ 50 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR826LDP-T1-RE3

SIR826LDP-T1-RE3

MOSFET N-CH 80V 21.3A/86A PPAK

Vishay Siliconix
3,160 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 21.3A (Ta), 86A (Tc) 10V 5mOhm @ 15A, 10V 2.4V @ 250µA 91 nC @ 10 V ±20V 3840 pF @ 40 V - 5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJ470DP-T1-GE3

SIJ470DP-T1-GE3

MOSFET N-CH 100V 58.8A PPAK SO-8

Vishay Siliconix
3,901 -

RFQ

SIJ470DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 100 V 58.8A (Tc) 7.5V, 10V 9.1mOhm @ 20A, 10V 3.5V @ 250µA 56 nC @ 10 V ±20V 2050 pF @ 50 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS888DN-T1-GE3

SIS888DN-T1-GE3

MOSFET N-CH 150V 20.2A PPAK

Vishay Siliconix
2,024 -

RFQ

SIS888DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 20.2A (Tc) 7.5V, 10V 58mOhm @ 10A, 10V 4.2V @ 250µA 14.5 nC @ 10 V ±20V 420 pF @ 75 V - 52W (Tc) -55°C ~ 150°C (TA) Surface Mount
SQD07N25-350H_GE3

SQD07N25-350H_GE3

MOSFET N-CH 250V 7A TO252AA

Vishay Siliconix
2,849 -

RFQ

SQD07N25-350H_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 7A (Tc) 10V 350mOhm @ 10A, 10V 3.5V @ 250µA 29 nC @ 10 V ±30V 1205 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD30N05-20L_GE3

SQD30N05-20L_GE3

MOSFET N-CH 55V 30A TO252AA

Vishay Siliconix
2,182 -

RFQ

SQD30N05-20L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 20mOhm @ 20A, 10V 2.5V @ 250µA 18 nC @ 5 V ±20V 1175 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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