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Transistores - FETs, MOSFETs - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQD40020EL_GE3MOSFET N-CH 40V 100A TO252AA Vishay Siliconix |
2,362 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.2V @ 250µA | 165 nC @ 20 V | ±20V | 8800 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQ4184EY-T1_GE3MOSFET N-CH 40V 29A 8SOIC Vishay Siliconix |
3,266 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 29A (Tc) | 4.5V, 10V | 4.6mOhm @ 14A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 5400 pF @ 20 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SI7818DN-T1-GE3MOSFET N-CH 150V 2.2A PPAK1212-8 Vishay Siliconix |
2,420 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 2.2A (Ta) | 6V, 10V | 135mOhm @ 3.4A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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SI7623DN-T1-GE3MOSFET P-CH 20V 35A PPAK1212-8 Vishay Siliconix |
2,370 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 10V | 3.8mOhm @ 20A, 10V | 1.5V @ 250µA | 180 nC @ 10 V | ±12V | 5460 pF @ 10 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR826BDP-T1-RE3MOSFET N-CH 80V 19.8A/80.8A PPAK Vishay Siliconix |
2,589 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 19.8A (Ta), 80.8A (Tc) | 7.5V, 10V | 5.1mOhm @ 15A, 10V | 3.8V @ 250µA | 69 nC @ 10 V | ±20V | 3030 pF @ 40 V | - | 5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIJ494DP-T1-GE3MOSFET N-CH 150V 36.8A PPAK SO-8 Vishay Siliconix |
3,879 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 36.8A (Tc) | 7.5V, 10V | 23.2mOhm @ 15A, 10V | 4.5V @ 250µA | 31 nC @ 10 V | ±20V | 1070 pF @ 75 V | - | 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SISS22DN-T1-GE3MOSFET N-CH 60V 25A/90.6A PPAK Vishay Siliconix |
2,760 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Ta), 90.6A (Tc) | 7.5V, 10V | 4mOhm @ 15A, 10V | 3.6V @ 250µA | 44 nC @ 10 V | ±20V | 1870 pF @ 30 V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQJ403EP-T1_GE3MOSFET P-CH 30V 30A PPAK SO-8 Vishay Siliconix |
2,183 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 109 nC @ 10 V | ±20V | 4500 pF @ 15 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFR9310TRLPBFMOSFET P-CH 400V 1.8A DPAK Vishay Siliconix |
2,005 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQJ488EP-T1_BE3MOSFET N-CH 100V 42A PPAK SO-8 Vishay Siliconix |
2,095 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 21mOhm @ 7.1A, 10V | 2.5V @ 250µA | 27 nC @ 10 V | ±20V | 978 pF @ 50 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
SQJ488EP-T2_BE3MOSFET N-CH 100V 42A PPAK SO-8 Vishay Siliconix |
2,460 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 21mOhm @ 7.1A, 10V | 2.5V @ 250µA | 27 nC @ 10 V | ±20V | 978 pF @ 50 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
SQD100N03-3M4_GE3MOSFET N-CH 30V 100A TO252AA Vishay Siliconix |
2,698 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 10V | 3.4mOhm @ 20A, 10V | 3.5V @ 250µA | 124 nC @ 10 V | ±20V | 7349 pF @ 15 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SQD100N04-3M6_GE3MOSFET N-CH 40V 100A TO252AA Vishay Siliconix |
3,444 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.6mOhm @ 20A, 10V | 3.5V @ 250µA | 105 nC @ 10 V | ±20V | 6700 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRFR320TRLPBFMOSFET N-CH 400V 3.1A DPAK Vishay Siliconix |
3,528 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIR106DP-T1-RE3MOSFET N-CH 100V 16.1A PPAK Vishay Siliconix |
2,402 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16.1A (Ta), 65.8A (Tc) | 7.5V, 10V | 8mOhm @ 15A, 10V | 3.4V @ 250µA | 64 nC @ 10 V | ±20V | 3610 pF @ 50 V | - | 3.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIR608DP-T1-RE3MOSFET N-CH 45V 51A/208A PPAK Vishay Siliconix |
3,424 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 51A (Ta), 208A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.3V @ 250µA | 167 nC @ 10 V | +20V, -16V | 8900 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SISS80DN-T1-GE3MOSFET N-CH 20V 58.3A/210A PPAK Vishay Siliconix |
3,750 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 58.3A (Ta), 210A (Tc) | 2.5V, 10V | 0.92mOhm @ 10A, 10V | 1.5V @ 250µA | 122 nC @ 10 V | +12V, -8V | 6450 pF @ 10 V | - | 5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IRFR024TRLPBFMOSFET N-CH 60V 14A DPAK Vishay Siliconix |
2,372 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SQJA78EP-T1_GE3MOSFET N-CH 80V 72A PPAK SO-8 Vishay Siliconix |
3,376 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 72A (Tc) | 10V | 5.3mOhm @ 10A, 10V | 3.3V @ 250µA | 95 nC @ 10 V | ±20V | 5100 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIHJ690N60E-T1-GE3MOSFET N-CH 600V 5.6A PPAK SO-8 Vishay Siliconix |
3,434 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.6A (Tc) | 10V | 700mOhm @ 2A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±30V | 347 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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