Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHFR1N60A-GE3

SIHFR1N60A-GE3

MOSFET N-CH 600V 1.4A TO252AA

Vishay Siliconix
2,014 -

RFQ

SIHFR1N60A-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF630STRRPBF

IRF630STRRPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
3,172 -

RFQ

IRF630STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4630DY-T1-E3

SI4630DY-T1-E3

MOSFET N-CH 25V 40A 8SO

Vishay Siliconix
2,149 -

RFQ

SI4630DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V 2.2V @ 250µA 161 nC @ 10 V ±16V 6670 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF530STRRPBF

IRF530STRRPBF

MOSFET N-CH 100V 14A TO263

Vishay Siliconix
2,998 -

RFQ

IRF530STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHU5N50D-GE3

SIHU5N50D-GE3

MOSFET N-CH 500V 5.3A TO251

Vishay Siliconix
3,808 -

RFQ

SIHU5N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

MOSFET N-CH 650V 5.6A PPAK SO-8

Vishay Siliconix
3,531 -

RFQ

SIHJ6N65E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 5.6A (Tc) 10V 868mOhm @ 3A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 596 pF @ 100 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF820STRLPBF

IRF820STRLPBF

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
3,285 -

RFQ

IRF820STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD35N10-26P-E3

SUD35N10-26P-E3

MOSFET N-CH 100V 35A TO252

Vishay Siliconix
2,499 -

RFQ

SUD35N10-26P-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 7V, 10V 26mOhm @ 12A, 10V 4.4V @ 250µA 47 nC @ 10 V ±20V 2000 pF @ 12 V - 8.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4490DY-T1-GE3

SI4490DY-T1-GE3

MOSFET N-CH 200V 2.85A 8SO

Vishay Siliconix
2,598 -

RFQ

SI4490DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 2.85A (Ta) 6V, 10V 80mOhm @ 4A, 10V 2V @ 250µA (Min) 42 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIR846ADP-T1-GE3

SIR846ADP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
2,318 -

RFQ

SIR846ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 7.8mOhm @ 20A, 10V 3V @ 250µA 66 nC @ 10 V ±20V 2350 pF @ 50 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD1K4N60E-GE3

SIHD1K4N60E-GE3

MOSFET N-CH 600V 4.2A TO252AA

Vishay Siliconix
3,307 -

RFQ

SIHD1K4N60E-GE3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 4.2A (Tc) 10V 1.45Ohm @ 500mA, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 172 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR680DP-T1-RE3

SIR680DP-T1-RE3

MOSFET N-CH 80V 100A PPAK SO-8

Vishay Siliconix
3,980 -

RFQ

SIR680DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 3.4V @ 250µA 81 nC @ 7.5 V ±20V 5150 pF @ 40 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ148E-T1_GE3

SQJQ148E-T1_GE3

MOSFET N-CH 40V 375A PPAK 8 X 8

Vishay Siliconix
3,085 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 375A (Tc) 10V 1.6mOhm @ 20A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 4930 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD50N04-5M6L_GE3

SQD50N04-5M6L_GE3

MOSFET N-CH 40V 50A TO252AA

Vishay Siliconix
3,527 -

RFQ

SQD50N04-5M6L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 4000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD50N04-4M5L_GE3

SQD50N04-4M5L_GE3

MOSFET N-CH 40V 50A TO252AA

Vishay Siliconix
3,455 -

RFQ

SQD50N04-4M5L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.5V @ 250µA 130 nC @ 10 V ±20V 5860 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHD5N50D-E3

SIHD5N50D-E3

MOSFET N-CH 500V 5.3A DPAK

Vishay Siliconix
3,319 -

RFQ

SIHD5N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR140DP-T1-GE3

SIDR140DP-T1-GE3

MOSFET N-CH 25V 79A/100A PPAK

Vishay Siliconix
2,230 -

RFQ

SIDR140DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 79A (Ta), 100A (Tc) 4.5V, 10V 0.67mOhm @ 20A, 10V 2.1V @ 250µA 170 nC @ 10 V +20V, -16V 8150 pF @ 10 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR104DP-T1-RE3

SIR104DP-T1-RE3

MOSFET N-CH 100V 18.3A/79A PPAK

Vishay Siliconix
2,778 -

RFQ

SIR104DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 18.3A (Ta), 79A (Tc) 7.5V, 10V 6.4mOhm @ 15A, 10V 3.5V @ 250µA 84 nC @ 10 V ±20V 4230 pF @ 50 V - 5.4W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR390DP-T1-GE3

SIDR390DP-T1-GE3

MOSFET N-CH 30V 69.9A/100A PPAK

Vishay Siliconix
2,077 -

RFQ

SIDR390DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 69.9A (Ta), 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ142E-T1_GE3

SQJQ142E-T1_GE3

MOSFET N-CH 40V 460A PPAK 8 X 8

Vishay Siliconix
2,031 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 460A (Tc) 10V 1.24mOhm @ 20A, 10V 3.5V @ 250µA 130 nC @ 10 V ±20V 6975 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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