Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI6410DQ-T1-GE3

SI6410DQ-T1-GE3

MOSFET N-CH 30V 8TSSOP

Vishay Siliconix
2,188 -

RFQ

SI6410DQ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.8A (Ta) 4.5V, 10V 14mOhm @ 7.8A, 10V 1V @ 250µA (Min) 33 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6433BDQ-T1-GE3

SI6433BDQ-T1-GE3

MOSFET P-CH 12V 4A 8TSSOP

Vishay Siliconix
2,598 -

RFQ

SI6433BDQ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 4A (Ta) 2.5V, 4.5V 40mOhm @ 4.8A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±8V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6435ADQ-T1-GE3

SI6435ADQ-T1-GE3

MOSFET P-CH 30V 4.7A 8-TSSOP

Vishay Siliconix
2,427 -

RFQ

SI6435ADQ-T1-GE3

Ficha técnica

Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) - 30mOhm @ 5.5A, 10V 1V @ 250µA (Min) 20 nC @ 5 V - - - - - Surface Mount
SI6459BDQ-T1-GE3

SI6459BDQ-T1-GE3

MOSFET P-CH 60V 2.2A 8TSSOP

Vishay Siliconix
2,338 -

RFQ

SI6459BDQ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 2.2A (Ta) 4.5V, 10V 115mOhm @ 2.7A, 10V 3V @ 250µA 22 nC @ 10 V ±20V - - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHF068N60EF-GE3

SIHF068N60EF-GE3

MOSFET N-CH 600V 16A TO220

Vishay Siliconix
3,761 -

RFQ

SIHF068N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP068N60EF-GE3

SIHP068N60EF-GE3

MOSFET N-CH 600V 41A TO220AB

Vishay Siliconix
3,504 -

RFQ

SIHP068N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP24N65E-E3

SIHP24N65E-E3

MOSFET N-CH 650V 24A TO220AB

Vishay Siliconix
3,606 -

RFQ

SIHP24N65E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2740 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG068N60EF-GE3

SIHG068N60EF-GE3

MOSFET N-CH 600V 41A TO247AC

Vishay Siliconix
3,945 -

RFQ

SIHG068N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI6463BDQ-T1-GE3

SI6463BDQ-T1-GE3

MOSFET P-CH 20V 6.2A 8-TSSOP

Vishay Siliconix
2,412 -

RFQ

SI6463BDQ-T1-GE3

Ficha técnica

Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.2A (Ta) - 15mOhm @ 7.4A, 4.5V 800mV @ 250µA 60 nC @ 5 V - - - - - Surface Mount
SI7107DN-T1-GE3

SI7107DN-T1-GE3

MOSFET P-CH 20V 9.8A PPAK1212-8

Vishay Siliconix
3,045 -

RFQ

SI7107DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.8A (Ta) 1.8V, 4.5V 10.8mOhm @ 15.3A, 4.5V 1V @ 450µA 44 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7120DN-T1-GE3

SI7120DN-T1-GE3

MOSFET N-CH 60V 6.3A 1212-8

Vishay Siliconix
3,990 -

RFQ

SI7120DN-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6.3A (Ta) - 19mOhm @ 10A, 10V 3.5V @ 250µA 45 nC @ 10 V - - - - - Surface Mount
SI7366DP-T1-GE3

SI7366DP-T1-GE3

MOSFET N-CH 20V 13A PPAK SO-8

Vishay Siliconix
2,816 -

RFQ

SI7366DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 13A (Ta) 4.5V, 10V 5.5mOhm @ 20A, 10V 3V @ 250µA 25 nC @ 4.5 V ±20V - - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7411DN-T1-GE3

SI7411DN-T1-GE3

MOSFET P-CH 20V 7.5A PPAK1212-8

Vishay Siliconix
2,109 -

RFQ

SI7411DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.8V, 4.5V 19mOhm @ 11.4A, 4.5V 1V @ 300µA 41 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7459DP-T1-GE3

SI7459DP-T1-GE3

MOSFET P-CH 30V 13A PPAK SO-8

Vishay Siliconix
2,097 -

RFQ

SI7459DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 10V 6.8mOhm @ 22A, 10V 3V @ 250µA 170 nC @ 10 V ±25V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7483ADP-T1-GE3

SI7483ADP-T1-GE3

MOSFET P-CH 30V 14A PPAK SO-8

Vishay Siliconix
2,157 -

RFQ

SI7483ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 5.7mOhm @ 24A, 10V 3V @ 250µA 180 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7485DP-T1-GE3

SI7485DP-T1-GE3

MOSFET P-CH 20V 12.5A PPAK SO-8

Vishay Siliconix
2,494 -

RFQ

SI7485DP-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) - 7.3mOhm @ 20A, 4.5V 900mV @ 1mA 150 nC @ 5 V - - - - - Surface Mount
SIA411DJ-T1-GE3

SIA411DJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix
3,999 -

RFQ

SIA411DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.5V, 4.5V 30mOhm @ 5.9A, 4.5V 1V @ 250µA 38 nC @ 8 V ±8V 1200 pF @ 10 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB28N60EF-GE3

SIHB28N60EF-GE3

MOSFET N-CH 600V 28A D2PAK

Vishay Siliconix
3,570 -

RFQ

SIHB28N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 123mOhm @ 14A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2714 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB33N60EF-GE3

SIHB33N60EF-GE3

MOSFET N-CH 600V 33A D2PAK

Vishay Siliconix
2,731 -

RFQ

SIHB33N60EF-GE3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 98mOhm @ 16.5A, 10V 4V @ 250µA 155 nC @ 10 V ±30V 3454 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG052N60EF-GE3

SIHG052N60EF-GE3

MOSFET N-CH 600V 48A TO247AC

Vishay Siliconix
3,103 -

RFQ

SIHG052N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 52mOhm @ 23A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 3380 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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