Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUP70101EL-GE3

SUP70101EL-GE3

MOSFET P-CH 100V 120A TO220AB

Vishay Siliconix
2,009 -

RFQ

SUP70101EL-GE3

Ficha técnica

Tube TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V - 2.5V @ 250µA 190 nC @ 10 V ±20V 7000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB125N60EF-GE3

SIHB125N60EF-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix
3,257 -

RFQ

SIHB125N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH27N60EF-T1-GE3

SIHH27N60EF-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix
2,299 -

RFQ

SIHH27N60EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 100mOhm @ 13.5A, 10V 4V @ 250µA 135 nC @ 10 V ±30V 2609 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFPF40PBF

IRFPF40PBF

MOSFET N-CH 900V 4.7A TO247-3

Vishay Siliconix
2,180 -

RFQ

IRFPF40PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 4.7A (Tc) 10V 2.5Ohm @ 2.8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP17N80E-BE3

SIHP17N80E-BE3

MOSFET N-CH 800V 15A TO220AB

Vishay Siliconix
2,680 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP57N20-33-E3

SUP57N20-33-E3

MOSFET N-CH 200V 57A TO220AB

Vishay Siliconix
2,432 -

RFQ

SUP57N20-33-E3

Ficha técnica

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 57A (Tc) 10V 33mOhm @ 30A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5100 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP048PBF

IRFP048PBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix
3,800 -

RFQ

IRFP048PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 18mOhm @ 44A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH070N60EF-T1GE3

SIHH070N60EF-T1GE3

MOSFET N-CH 600V 36A PPAK 8 X 8

Vishay Siliconix
2,275 -

RFQ

SIHH070N60EF-T1GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2647 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUP40N25-60-E3

SUP40N25-60-E3

MOSFET N-CH 250V 40A TO220AB

Vishay Siliconix
2,159 -

RFQ

SUP40N25-60-E3

Ficha técnica

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 40A (Tc) 6V, 10V 60mOhm @ 20A, 10V 4V @ 250µA 140 nC @ 10 V ±30V 5000 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHH068N60E-T1-GE3

SIHH068N60E-T1-GE3

MOSFET N-CH 600V 34A PPAK 8 X 8

Vishay Siliconix
2,489 -

RFQ

SIHH068N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 68mOhm @ 15A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 2650 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUG80050E-GE3

SUG80050E-GE3

MOSFET N-CH 150V 100A TO247AC

Vishay Siliconix
2,496 -

RFQ

SUG80050E-GE3

Ficha técnica

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 7.5V, 10V 5.4mOhm @ 20A, 10V 4V @ 250µA 165 nC @ 10 V ±20V 6250 pF @ 75 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB120N60E-GE3

SIHB120N60E-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix
3,585 -

RFQ

SIHB120N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUP85N15-21-E3

SUP85N15-21-E3

MOSFET N-CH 150V 85A TO220AB

Vishay Siliconix
3,511 -

RFQ

SUP85N15-21-E3

Ficha técnica

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 21mOhm @ 30A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 4750 pF @ 25 V - 2.4W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI1065X-T1-GE3

SI1065X-T1-GE3

MOSFET P-CH 12V 1.18A SC89-6

Vishay Siliconix
2,503 -

RFQ

SI1065X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.18A (Ta) 1.8V, 4.5V 156mOhm @ 1.18A, 4.5V 950mV @ 250µA 10.8 nC @ 5 V ±8V 480 pF @ 6 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1071X-T1-GE3

SI1071X-T1-GE3

MOSFET P-CH 30V 0.96A SC89-6

Vishay Siliconix
2,092 -

RFQ

SI1071X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 960mA (Ta) 2.5V, 10V 167mOhm @ 960mA, 10V 1.45V @ 250µA 13.3 nC @ 10 V ±12V 315 pF @ 15 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2351DS-T1-GE3

SI2351DS-T1-GE3

MOSFET P-CH 20V 2.8A SOT23-3

Vishay Siliconix
2,949 -

RFQ

SI2351DS-T1-GE3

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Tc) - 115mOhm @ 2.4A, 4.5V 1.5V @ 250µA 5.1 nC @ 5 V - 250 pF @ 10 V - - - Surface Mount
SI4378DY-T1-GE3

SI4378DY-T1-GE3

MOSFET N-CH 20V 19A 8SO

Vishay Siliconix
2,471 -

RFQ

SI4378DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 19A (Ta) 2.5V, 4.5V 2.7mOhm @ 25A, 4.5V 1.8V @ 250µA 55 nC @ 4.5 V ±12V 8500 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4825DY-T1-GE3

SI4825DY-T1-GE3

MOSFET P-CH 30V 8.1A 8SO

Vishay Siliconix
3,508 -

RFQ

SI4825DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8.1A (Ta) 4.5V, 10V 14mOhm @ 11.5A, 10V 3V @ 250µA 71 nC @ 10 V ±25V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5435BDC-T1-GE3

SI5435BDC-T1-GE3

MOSFET P-CH 30V 4.3A 1206-8

Vishay Siliconix
2,128 -

RFQ

SI5435BDC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 4.5V, 10V 45mOhm @ 4.3A, 10V 3V @ 250µA 24 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5447DC-T1-GE3

SI5447DC-T1-GE3

MOSFET P-CH 20V 3.5A 1206-8

Vishay Siliconix
2,114 -

RFQ

SI5447DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.8V, 4.5V 76mOhm @ 3.5A, 4.5V 450mV @ 250µA (Min) 10 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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