Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP24N80AE-GE3

SIHP24N80AE-GE3

MOSFET N-CH 800V 21A TO220AB

Vishay Siliconix
3,317 -

RFQ

SIHP24N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 21A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA22N60EF-GE3

SIHA22N60EF-GE3

MOSFET N-CH 600V 19A TO220

Vishay Siliconix
3,168 -

RFQ

SIHA22N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI1067X-T1-GE3

SI1067X-T1-GE3

MOSFET P-CH 20V 1.06A SC89-6

Vishay Siliconix
3,178 -

RFQ

SI1067X-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.06A (Ta) 1.8V, 4.5V 150mOhm @ 1.06A, 4.5V 950mV @ 250µA 9.3 nC @ 5 V ±8V 375 pF @ 10 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4398DY-T1-GE3

SI4398DY-T1-GE3

MOSFET N-CH 20V 19A 8SO

Vishay Siliconix
2,058 -

RFQ

SI4398DY-T1-GE3

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 19A (Ta) 4.5V, 10V 2.8mOhm @ 25A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 5620 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA443DJ-T1-GE3

SIA443DJ-T1-GE3

MOSFET P-CH 20V 9A PPAK SC70-6

Vishay Siliconix
2,754 -

RFQ

SIA443DJ-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 1.8V, 4.5V 45mOhm @ 4.7A, 4.5V 1V @ 250µA 25 nC @ 8 V ±8V 750 pF @ 10 V - 3.3W (Ta), 15W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA450DJ-T1-GE3

SIA450DJ-T1-GE3

MOSFET N-CH 240V 1.52A PPAK

Vishay Siliconix
3,597 -

RFQ

SIA450DJ-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 1.52A (Tc) 2.5V, 10V 2.9Ohm @ 700mA, 10V 2.4V @ 250µA 7.04 nC @ 10 V ±20V 167 pF @ 120 V - 3.3W (Ta), 15W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA810DJ-T1-GE3

SIA810DJ-T1-GE3

MOSFET N-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix
3,721 -

RFQ

SIA810DJ-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Active N-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 1.8V, 4.5V 53mOhm @ 3.7A, 4.5V 1V @ 250µA 11.5 nC @ 8 V ±8V 400 pF @ 10 V Schottky Diode (Isolated) 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA811DJ-T1-GE3

SIA811DJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix
3,815 -

RFQ

SIA811DJ-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 1.8V, 4.5V 94mOhm @ 2.8A, 4.5V 1V @ 250µA 13 nC @ 8 V ±8V 355 pF @ 10 V Schottky Diode (Isolated) 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB412DK-T1-GE3

SIB412DK-T1-GE3

MOSFET N-CH 20V 9A PPAK SC75-6

Vishay Siliconix
3,914 -

RFQ

SIB412DK-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 1.8V, 4.5V 34mOhm @ 6.6A, 4.5V 1V @ 250µA 10.16 nC @ 5 V ±8V 535 pF @ 10 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1046R-T1-GE3

SI1046R-T1-GE3

MOSFET N-CH 20V SC75A

Vishay Siliconix
2,124 -

RFQ

SI1046R-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 606mA ( Ta) 1.8V, 4.5V 420mOhm @ 606mA, 4.5V 950mV @ 250µA 1.49 nC @ 5 V ±8V 66 pF @ 10 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1046X-T1-GE3

SI1046X-T1-GE3

MOSFET N-CH 20V SC89-3

Vishay Siliconix
2,876 -

RFQ

SI1046X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 606mA ( Ta) 1.8V, 4.5V 420mOhm @ 606mA, 4.5V 950mV @ 250µA 1.49 nC @ 5 V ±8V 66 pF @ 10 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1051X-T1-GE3

SI1051X-T1-GE3

MOSFET P-CH 8V 1.2A SC89-6

Vishay Siliconix
2,011 -

RFQ

SI1051X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 1.2A (Ta) 1.5V, 4.5V 122mOhm @ 1.2A, 4.5V 1V @ 250µA 9.45 nC @ 5 V ±5V 560 pF @ 4 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1054X-T1-GE3

SI1054X-T1-GE3

MOSFET N-CH 12V 1.32A SC89-6

Vishay Siliconix
3,426 -

RFQ

SI1054X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 1.32A (Ta) 1.8V, 4.5V 95mOhm @ 1.32A, 4.5V 1V @ 250µA 8.57 nC @ 5 V ±8V 480 pF @ 6 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1069X-T1-GE3

SI1069X-T1-GE3

MOSFET P-CH 20V 0.94A SC89-6

Vishay Siliconix
3,096 -

RFQ

SI1069X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 940mA (Ta) 2.5V, 4.5V 184mOhm @ 940mA, 4.5V 1.5V @ 250µA 6.86 nC @ 5 V ±12V 308 pF @ 10 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1073X-T1-GE3

SI1073X-T1-GE3

MOSFET P-CH 30V 0.98A SC89-6

Vishay Siliconix
3,202 -

RFQ

SI1073X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 980mA (Ta) 4.5V, 10V 173mOhm @ 980mA, 10V 3V @ 250µA 9.45 nC @ 10 V ±20V 265 pF @ 15 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2305ADS-T1-GE3

SI2305ADS-T1-GE3

MOSFET P-CH 8V 5.4A SOT23-3

Vishay Siliconix
2,724 -

RFQ

SI2305ADS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.4A (Tc) 1.8V, 4.5V 40mOhm @ 4.1A, 4.5V 800mV @ 250µA 15 nC @ 4.5 V ±8V 740 pF @ 4 V - 960mW (Ta), 1.7W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI5406CDC-T1-GE3

SI5406CDC-T1-GE3

MOSFET N-CH 12V 6A 1206-8

Vishay Siliconix
2,013 -

RFQ

SI5406CDC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 6A (Tc) 1.8V, 4.5V 20mOhm @ 6.5A, 4.5V 1V @ 250µA 32 nC @ 8 V ±8V 1100 pF @ 6 V - 2.3W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5410DU-T1-GE3

SI5410DU-T1-GE3

MOSFET N-CH 40V 12A PPAK

Vishay Siliconix
3,895 -

RFQ

SI5410DU-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 12A (Tc) 4.5V, 10V 18mOhm @ 6.6A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 1350 pF @ 20 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5432DC-T1-GE3

SI5432DC-T1-GE3

MOSFET N-CH 20V 6A 1206-8

Vishay Siliconix
3,435 -

RFQ

SI5432DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 4.5V 20mOhm @ 8.3A, 4.5V 1.5V @ 250µA 33 nC @ 10 V ±12V 1200 pF @ 10 V - 2.5W (Ta), 6.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5475DDC-T1-GE3

SI5475DDC-T1-GE3

MOSFET P-CH 12V 6A 1206-8

Vishay Siliconix
3,488 -

RFQ

SI5475DDC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 6A (Tc) 1.8V, 4.5V 32mOhm @ 5.4A, 4.5V 1V @ 250µA 50 nC @ 8 V ±8V 1600 pF @ 6 V - 2.3W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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