Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUM70030E-GE3

SUM70030E-GE3

MOSFET N-CH 100V 150A TO263

Vishay Siliconix
2,243 -

RFQ

SUM70030E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Tc) 7.5V, 10V 2.88mOhm @ 30A, 10V 4V @ 250µA 214 nC @ 10 V ±20V 10870 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI634GPBF

IRFI634GPBF

MOSFET N-CH 250V 5.6A TO220-3

Vishay Siliconix
2,054 -

RFQ

IRFI634GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 5.6A (Tc) 10V 450mOhm @ 3.4A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644STRRPBF

IRF644STRRPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
3,550 -

RFQ

IRF644STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ480E-T1_GE3

SQJQ480E-T1_GE3

MOSFET N-CH 80V 150A PPAK 8 X 8

Vishay Siliconix
3,472 -

RFQ

SQJQ480E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 150A (Tc) 10V 3mOhm @ 20A, 10V 3.5V @ 250µA 144 nC @ 10 V ±20V 8625 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL640PBF

IRL640PBF

MOSFET N-CH 200V 17A TO220AB

Vishay Siliconix
2,503 -

RFQ

IRL640PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB11N50APBF-BE3

IRFB11N50APBF-BE3

MOSFET N-CH 500V 11A TO220AB

Vishay Siliconix
3,084 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG30PBF

IRFBG30PBF

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix
3,546 -

RFQ

IRFBG30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF12N65E-GE3

SIHF12N65E-GE3

MOSFET N-CH 650V 12A TO220

Vishay Siliconix
2,846 -

RFQ

SIHF12N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA15N80AE-GE3

SIHA15N80AE-GE3

MOSFET N-CH 800V 6A TO220

Vishay Siliconix
3,094 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM120N06-3M5L_GE3

SQM120N06-3M5L_GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix
3,043 -

RFQ

SQM120N06-3M5L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 3.5mOhm @ 29A, 10V 2.5V @ 250µA 330 nC @ 10 V ±20V 14700 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM200N04-1M1L_GE3

SQM200N04-1M1L_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix
3,563 -

RFQ

SQM200N04-1M1L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2.5V @ 250µA 413 nC @ 10 V ±20V 20655 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHB15N80AE-GE3

SIHB15N80AE-GE3

MOSFET N-CH 800V 13A D2PAK

Vishay Siliconix
3,832 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 7.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1093 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFIBE30GPBF

IRFIBE30GPBF

MOSFET N-CH 800V 2.1A TO220-3

Vishay Siliconix
3,620 -

RFQ

IRFIBE30GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30LPBF

IRFBE30LPBF

MOSFET N-CH 800V 4.1A I2PAK

Vishay Siliconix
2,140 -

RFQ

IRFBE30LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLIZ44GPBF

IRLIZ44GPBF

MOSFET N-CH 60V 30A TO220-3

Vishay Siliconix
3,869 -

RFQ

IRLIZ44GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 28mOhm @ 18A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHD180N60E-GE3

SIHD180N60E-GE3

MOSFET N-CH 600V 19A TO252AA

Vishay Siliconix
3,011 -

RFQ

SIHD180N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 195mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1080 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUP10250E-GE3

SUP10250E-GE3

MOSFET N-CH 250V 63A TO220AB

Vishay Siliconix
2,055 -

RFQ

SUP10250E-GE3

Ficha técnica

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 250 V 63A (Tc) 7.5V, 10V - 4V @ 250µA 88 nC @ 10 V ±20V - - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

MOSFET N-CH 600V 10A PPAK SO-8

Vishay Siliconix
2,224 -

RFQ

SIHJ10N60E-T1-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 360mOhm @ 5A, 10V 4.5V @ 250µA 50 nC @ 10 V ±30V 784 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB12N65E-GE3

SIHB12N65E-GE3

MOSFET N-CH 650V 12A D2PAK

Vishay Siliconix
3,819 -

RFQ

SIHB12N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 70 nC @ 10 V ±30V 1224 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP20N50E-GE3

SIHP20N50E-GE3

MOSFET N-CH 500V 19A TO220AB

Vishay Siliconix
2,545 -

RFQ

SIHP20N50E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 4747 Record«Prev1... 8182838485868788...238Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário