Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR880DP-T1-GE3

SIR880DP-T1-GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
2,402 -

RFQ

SIR880DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 5.9mOhm @ 20A, 10V 2.8V @ 250µA 74 nC @ 10 V ±20V 2440 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7858ADP-T1-GE3

SI7858ADP-T1-GE3

MOSFET N-CH 12V 20A PPAK SO-8

Vishay Siliconix
3,156 -

RFQ

SI7858ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 20A (Ta) 2.5V, 4.5V 2.6mOhm @ 29A, 4.5V 1.5V @ 250µA 80 nC @ 4.5 V ±8V 5700 pF @ 6 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF840BPBF

IRF840BPBF

MOSFET N-CH 500V 8.7A TO220AB

Vishay Siliconix
2,267 -

RFQ

IRF840BPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD90P04-9M4L_GE3

SQD90P04-9M4L_GE3

MOSFET P-CH 40V 90A TO252AA

Vishay Siliconix
3,824 -

RFQ

SQD90P04-9M4L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 9.4mOhm @ 17A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 6675 pF @ 20 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7370DP-T1-GE3

SI7370DP-T1-GE3

MOSFET N-CH 60V 9.6A PPAK SO-8

Vishay Siliconix
3,680 -

RFQ

SI7370DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 9.6A (Ta) 10V 11mOhm @ 12A, 10V 4V @ 250µA 57 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFBE20PBF

IRFBE20PBF

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix
2,016 -

RFQ

IRFBE20PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD50P08-28_GE3

SQD50P08-28_GE3

MOSFET P-CH 80V 48A TO252AA

Vishay Siliconix
3,042 -

RFQ

SQD50P08-28_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 48A (Tc) 10V 28mOhm @ 12.5A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 6035 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF830STRLPBF

IRF830STRLPBF

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix
2,354 -

RFQ

IRF830STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7172DP-T1-GE3

SI7172DP-T1-GE3

MOSFET N-CH 200V 25A PPAK SO-8

Vishay Siliconix
3,065 -

RFQ

SI7172DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Tc) 6V, 10V 70mOhm @ 5.9A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 2250 pF @ 100 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR626DP-T1-GE3

SIDR626DP-T1-GE3

MOSFET N-CH 60V 42.8A/100A PPAK

Vishay Siliconix
2,179 -

RFQ

SIDR626DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 42.8A (Ta), 100A (Tc) 6V, 10V 1.7mOhm @ 20A, 10V 3.4V @ 250µA 102 nC @ 10 V ±20V 5130 pF @ 30 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40020E_GE3

SQM40020E_GE3

MOSFET N-CH 40V 100A TO263

Vishay Siliconix
3,200 -

RFQ

SQM40020E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.33mOhm @ 20A, 10V 3.5V @ 250µA 130 nC @ 10 V ±20V 8000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHJ240N60E-T1-GE3

SIHJ240N60E-T1-GE3

MOSFET N-CH 600V 12A PPAK SO-8

Vishay Siliconix
3,187 -

RFQ

SIHJ240N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM100N02-3M5L_GE3

SQM100N02-3M5L_GE3

MOSFET N-CH 20V 100A TO263

Vishay Siliconix
2,582 -

RFQ

SQM100N02-3M5L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5500 pF @ 10 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR010PBF

IRFR010PBF

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix
3,296 -

RFQ

IRFR010PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7450DP-T1-E3

SI7450DP-T1-E3

MOSFET N-CH 200V 3.2A PPAK SO-8

Vishay Siliconix
3,455 -

RFQ

SI7450DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.2A (Ta) 6V, 10V 80mOhm @ 4A, 10V 4.5V @ 250µA 42 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF740BPBF

IRF740BPBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
2,023 -

RFQ

IRF740BPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU220PBF

IRFU220PBF

MOSFET N-CH 200V 4.8A TO251AA

Vishay Siliconix
2,174 -

RFQ

IRFU220PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR310PBF

IRFR310PBF

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
2,306 -

RFQ

IRFR310PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU9214PBF

IRFU9214PBF

MOSFET P-CH 250V 2.7A TO251AA

Vishay Siliconix
2,013 -

RFQ

IRFU9214PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 3Ohm @ 1.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 220 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR1N60APBF

IRFR1N60APBF

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix
2,104 -

RFQ

IRFR1N60APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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