Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR870ADP-T1-RE3

SIR870ADP-T1-RE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
3,463 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2866 pF @ 50 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU110PBF

IRFU110PBF

MOSFET N-CH 100V 4.3A TO251AA

Vishay Siliconix
3,625 -

RFQ

IRFU110PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHU5N80AE-GE3

SIHU5N80AE-GE3

MOSFET N-CH 800V 4.4A TO251AA

Vishay Siliconix
3,074 -

RFQ

SIHU5N80AE-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQR40N10-25_GE3

SQR40N10-25_GE3

MOSFET N-CH 100V 40A TO252 REV

Vishay Siliconix
2,083 -

RFQ

SQR40N10-25_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 25mOhm @ 40A, 10V 2.5V @ 250µA 70 nC @ 10 V ±20V 3380 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ410EP-T1_GE3

SQJ410EP-T1_GE3

MOSFET N-CH 30V 32A PPAK SO-8

Vishay Siliconix
2,975 -

RFQ

SQJ410EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 3.9mOhm @ 10.3A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 6210 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR668ADP-T1-RE3

SIDR668ADP-T1-RE3

MOSFET N-CH 100V 23.3A/104A PPAK

Vishay Siliconix
3,063 -

RFQ

SIDR668ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 23.3A (Ta), 104A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 3750 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR882DP-T1-GE3

SIR882DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
3,145 -

RFQ

SIR882DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 8.7mOhm @ 20A, 10V 2.8V @ 250µA 58 nC @ 10 V ±20V 1930 pF @ 50 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD25N15-52-BE3

SUD25N15-52-BE3

MOSFET N-CH 150V 25A DPAK

Vishay Siliconix
3,520 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 6V, 10V 52mOhm @ 5A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 1725 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU014PBF

IRLU014PBF

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix
2,582 -

RFQ

IRLU014PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF640STRLPBF

IRF640STRLPBF

MOSFET N-CH 200V 18A TO263

Vishay Siliconix
3,636 -

RFQ

IRF640STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40020EL_GE3

SQM40020EL_GE3

MOSFET N-CH 40V 100A TO263

Vishay Siliconix
2,357 -

RFQ

SQM40020EL_GE3

Ficha técnica

Cut Tape (CT),Tube Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.2V @ 250µA 165 nC @ 10 V ±20V 8800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR640ADP-T1-GE3

SIR640ADP-T1-GE3

MOSFET N-CH 40V 41.6A/100A PPAK

Vishay Siliconix
2,146 -

RFQ

SIR640ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 41.6A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 20A, 10V 2V @ 250µA 90 nC @ 10 V ±20V 4240 pF @ 20 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD50P06-15-BE3

SUD50P06-15-BE3

MOSFET P-CH 60V 50A DPAK

Vishay Siliconix
3,161 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15mOhm @ 17A, 10V 3V @ 250µA 165 nC @ 10 V ±20V 4950 pF @ 25 V - 2.5W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD6N80AE-GE3

SIHD6N80AE-GE3

MOSFET N-CH 800V 5A DPAK

Vishay Siliconix
2,751 -

RFQ

SIHD6N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM40N10-30_GE3

SQM40N10-30_GE3

MOSFET N-CH 100V 40A TO263

Vishay Siliconix
3,709 -

RFQ

SQM40N10-30_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 6V, 10V 30mOhm @ 15A, 10V 3.5V @ 250µA 62 nC @ 10 V ±20V 3345 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520SPBF

IRF520SPBF

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,288 -

RFQ

IRF520SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU210PBF

IRFU210PBF

MOSFET N-CH 200V 2.6A TO251AA

Vishay Siliconix
9,000 -

RFQ

IRFU210PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU014PBF

IRFU014PBF

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix
3,497 -

RFQ

IRFU014PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD9014PBF

IRFD9014PBF

MOSFET P-CH 60V 1.1A 4DIP

Vishay Siliconix
2,493 -

RFQ

IRFD9014PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 10V 500mOhm @ 660mA, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD9010PBF

IRFD9010PBF

MOSFET P-CH 50V 1.1A 4DIP

Vishay Siliconix
3,976 -

RFQ

IRFD9010PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 1.1A (Tc) 10V 500mOhm @ 580mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 240 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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