Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL620SPBF

IRL620SPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
2,502 -

RFQ

IRL620SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 10V 800mOhm @ 3.1A, 10V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z20PBF

IRF9Z20PBF

MOSFET P-CH 50V 9.7A TO220AB

Vishay Siliconix
3,846 -

RFQ

IRF9Z20PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 9.7A (Tc) 10V 280mOhm @ 5.6A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 480 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUM50020EL-GE3

SUM50020EL-GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix
2,369 -

RFQ

SUM50020EL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V 2.5V @ 250µA 126 nC @ 10 V ±20V 11113 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM90140E-GE3

SUM90140E-GE3

MOSFET N-CH 200V 90A D2PAK

Vishay Siliconix
2,687 -

RFQ

SUM90140E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 7.5V, 10V 17mOhm @ 30A, 10V 4V @ 250µA 96 nC @ 10 V ±20V 4132 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI530GPBF

IRFI530GPBF

MOSFET N-CH 100V 9.7A TO220-3

Vishay Siliconix
3,586 -

RFQ

IRFI530GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 160mOhm @ 5.8A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 670 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI530GPBF

IRLI530GPBF

MOSFET N-CH 100V 9.7A TO220-3

Vishay Siliconix
3,959 -

RFQ

IRLI530GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 4V, 5V 160mOhm @ 5.8A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQM100N10-10_GE3

SQM100N10-10_GE3

MOSFET N-CH 100V 100A TO263

Vishay Siliconix
2,167 -

RFQ

SQM100N10-10_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 2.5V @ 250µA 185 nC @ 10 V ±20V 8050 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM120P04-04L_GE3

SQM120P04-04L_GE3

MOSFET P-CH 40V 120A TO263

Vishay Siliconix
2,550 -

RFQ

SQM120P04-04L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.5V @ 250µA 330 nC @ 10 V ±20V 13980 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM50020EL_GE3

SQM50020EL_GE3

MOSFET N-CH 60V 120A TO263

Vishay Siliconix
2,778 -

RFQ

SQM50020EL_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2.5V @ 250µA 200 nC @ 10 V ±20V 15100 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA11N80AE-GE3

SIHA11N80AE-GE3

MOSFET N-CH 800V 8A TO220

Vishay Siliconix
3,676 -

RFQ

SIHA11N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUM90142E-GE3

SUM90142E-GE3

MOSFET N-CH 200V 90A TO263

Vishay Siliconix
3,018 -

RFQ

SUM90142E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 7.5V, 10V 15mOhm @ 30A, 10V 4V @ 250µA 87 nC @ 10 V ±20V 3120 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUP70060E-GE3

SUP70060E-GE3

MOSFET N-CH 100V 131A TO220AB

Vishay Siliconix
2,543 -

RFQ

SUP70060E-GE3

Ficha técnica

Bulk ThunderFET® Active N-Channel MOSFET (Metal Oxide) 100 V 131A (Tc) 7.5V, 10V 5.8mOhm @ 30A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 3330 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBF20SPBF

IRFBF20SPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,223 -

RFQ

IRFBF20SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB11N80AE-GE3

SIHB11N80AE-GE3

MOSFET N-CH 800V 8A D2PAK

Vishay Siliconix
2,257 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP15N50E-GE3

SIHP15N50E-GE3

MOSFET N-CH 500V 14.5A TO220AB

Vishay Siliconix
2,566 -

RFQ

SIHP15N50E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

MOSFET N-CH 600V 21A TO263

Vishay Siliconix
3,851 -

RFQ

SIHB22N60ET1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBE30PBF

IRFBE30PBF

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix
2,533 -

RFQ

IRFBE30PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7439DP-T1-GE3

SI7439DP-T1-GE3

MOSFET P-CH 150V 3A PPAK SO-8

Vishay Siliconix
3,497 -

RFQ

SI7439DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 3A (Ta) 6V, 10V 90mOhm @ 5.2A, 10V 4V @ 250µA 135 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS9N60ATRLPBF

IRFS9N60ATRLPBF

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
3,084 -

RFQ

IRFS9N60ATRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU9220PBF

IRFU9220PBF

MOSFET P-CH 200V 3.6A TO251AA

Vishay Siliconix
3,801 -

RFQ

IRFU9220PBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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