Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIA415DJ-T1-GE3

SIA415DJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix
3,665 -

RFQ

SIA415DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 35mOhm @ 5.6A, 4.5V 1.5V @ 250µA 47 nC @ 10 V ±12V 1250 pF @ 10 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA417DJ-T1-GE3

SIA417DJ-T1-GE3

MOSFET P-CH 8V 12A PPAK SC70-6

Vishay Siliconix
2,043 -

RFQ

SIA417DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 12A (Tc) 1.2V, 4.5V 23mOhm @ 7A, 4.5V 1V @ 250µA 32 nC @ 5 V ±5V 1600 pF @ 4 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA419DJ-T1-GE3

SIA419DJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix
3,220 -

RFQ

SIA419DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.2V, 4.5V 30mOhm @ 5.9A, 4.5V 850mV @ 250µA 29 nC @ 5 V ±5V 1500 pF @ 10 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA426DJ-T1-GE3

SIA426DJ-T1-GE3

MOSFET N-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix
3,970 -

RFQ

SIA426DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 2.5V, 10V 23.6mOhm @ 9.9A, 10V 1.5V @ 250µA 27 nC @ 10 V ±12V 1020 pF @ 10 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA430DJ-T1-GE3

SIA430DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Vishay Siliconix
2,192 -

RFQ

SIA430DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 4.5V, 10V 13.5mOhm @ 7A, 10V 3V @ 250µA 18 nC @ 10 V ±20V 800 pF @ 10 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA813DJ-T1-GE3

SIA813DJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix
3,047 -

RFQ

SIA813DJ-T1-GE3

Ficha técnica

Tape & Reel (TR) LITTLE FOOT® Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 1.8V, 4.5V 94mOhm @ 2.8A, 4.5V 1V @ 250µA 13 nC @ 8 V ±8V 355 pF @ 10 V Schottky Diode (Isolated) 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA814DJ-T1-GE3

SIA814DJ-T1-GE3

MOSFET N-CH 30V 4.5A PPAK SC70-6

Vishay Siliconix
2,661 -

RFQ

SIA814DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) LITTLE FOOT® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Tc) 2.5V, 10V 61mOhm @ 3.3A, 10V 1.5V @ 250µA 11 nC @ 10 V ±12V 340 pF @ 10 V Schottky Diode (Isolated) 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB413DK-T1-GE3

SIB413DK-T1-GE3

MOSFET P-CH 20V 9A PPAK SC75-6

Vishay Siliconix
2,164 -

RFQ

SIB413DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 2.5V, 4.5V 75mOhm @ 6.5A, 4.5V 1.5V @ 250µA 7.63 nC @ 5 V ±12V 357 pF @ 10 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB414DK-T1-GE3

SIB414DK-T1-GE3

MOSFET N-CH 8V 9A PPAK SC75-6

Vishay Siliconix
2,839 -

RFQ

SIB414DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 8 V 9A (Tc) 1.2V, 4.5V 26mOhm @ 7.9A, 4.5V 1V @ 250µA 14.03 nC @ 5 V ±5V 732 pF @ 4 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB415DK-T1-GE3

SIB415DK-T1-GE3

MOSFET P-CH 30V 9A PPAK SC75-6

Vishay Siliconix
3,701 -

RFQ

SIB415DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 87mOhm @ 4.17A, 10V 3V @ 250µA 10.05 nC @ 10 V ±20V 295 pF @ 15 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB417DK-T1-GE3

SIB417DK-T1-GE3

MOSFET P-CH 8V 9A PPAK SC75-6

Vishay Siliconix
3,988 -

RFQ

SIB417DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 9A (Tc) 1.2V, 4.5V 52mOhm @ 5.6A, 4.5V 1V @ 250µA 12.75 nC @ 5 V ±5V 675 pF @ 4 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB419DK-T1-GE3

SIB419DK-T1-GE3

MOSFET P-CH 12V 9A PPAK SC75-6

Vishay Siliconix
2,838 -

RFQ

SIB419DK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9A (Tc) 1.8V, 4.5V 60mOhm @ 5.2A, 4.5V 1V @ 250µA 11.82 nC @ 5 V ±8V 562 pF @ 6 V - 2.45W (Ta), 13.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB800EDK-T1-GE3

SIB800EDK-T1-GE3

MOSFET N-CH 20V 1.5A PPAK SC75-6

Vishay Siliconix
2,227 -

RFQ

SIB800EDK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) LITTLE FOOT® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Tc) 1.5V, 4.5V 225mOhm @ 1.6A, 4.5V 1V @ 250µA 1.7 nC @ 4.5 V ±6V - Schottky Diode (Isolated) 1.1W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR468DP-T1-GE3

SIR468DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
2,618 -

RFQ

SIR468DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 1720 pF @ 15 V - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR472DP-T1-GE3

SIR472DP-T1-GE3

MOSFET N-CH 30V 20A PPAK SO-8

Vishay Siliconix
2,412 -

RFQ

SIR472DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 12mOhm @ 13.8A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 820 pF @ 15 V - 3.9W (Ta), 29.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR476DP-T1-GE3

SIR476DP-T1-GE3

MOSFET N-CH 25V 60A PPAK SO-8

Vishay Siliconix
2,204 -

RFQ

SIR476DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 6150 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR492DP-T1-GE3

SIR492DP-T1-GE3

MOSFET N-CH 12V 40A PPAK SO-8

Vishay Siliconix
3,786 -

RFQ

SIR492DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 40A (Tc) 2.5V, 4.5V 3.8mOhm @ 15A, 4.5V 1V @ 250µA 110 nC @ 8 V ±8V 3720 pF @ 6 V - 4.2W (Ta), 36W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIR496DP-T1-GE3

SIR496DP-T1-GE3

MOSFET N-CH 20V 35A PPAK SO-8

Vishay Siliconix
2,316 -

RFQ

SIR496DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 1570 pF @ 10 V - 5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR840DP-T1-GE3

SIR840DP-T1-GE3

MOSFET N-CH 30V PPAK SO-8

Vishay Siliconix
2,221 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V - - - - - - - - - -55°C ~ 150°C (TJ) Surface Mount
SIR850DP-T1-GE3

SIR850DP-T1-GE3

MOSFET N-CH 25V 30A PPAK SO-8

Vishay Siliconix
2,158 -

RFQ

SIR850DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1120 pF @ 15 V - 4.8W (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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