Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB065N60E-GE3

SIHB065N60E-GE3

MOSFET N-CH 600V 40A D2PAK

Vishay Siliconix
2,092 -

RFQ

SIHB065N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP17N50LPBF

IRFP17N50LPBF

MOSFET N-CH 500V 16A TO247-3

Vishay Siliconix
3,726 -

RFQ

IRFP17N50LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 320mOhm @ 9.9A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 2760 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPC60PBF

IRFPC60PBF

MOSFET N-CH 600V 16A TO247-3

Vishay Siliconix
2,621 -

RFQ

IRFPC60PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 400mOhm @ 9.6A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 3900 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP065N60E-GE3

SIHP065N60E-GE3

MOSFET N-CH 600V 40A TO220AB

Vishay Siliconix
2,840 -

RFQ

SIHP065N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP23N50LPBF

IRFP23N50LPBF

MOSFET N-CH 500V 23A TO247-3

Vishay Siliconix
3,740 -

RFQ

IRFP23N50LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 235mOhm @ 14A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3600 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP31N50LPBF

IRFP31N50LPBF

MOSFET N-CH 500V 31A TO247-3

Vishay Siliconix
3,719 -

RFQ

IRFP31N50LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 31A (Tc) 10V 180mOhm @ 19A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 5000 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG47N60AE-GE3

SIHG47N60AE-GE3

MOSFET N-CH 600V 43A TO247AC

Vishay Siliconix
3,692 -

RFQ

SIHG47N60AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 10V 65mOhm @ 24A, 10V 4V @ 250µA 182 nC @ 10 V ±30V 3600 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG73N60E-GE3

SIHG73N60E-GE3

MOSFET N-CH 600V 73A TO247AC

Vishay Siliconix
2,643 -

RFQ

SIHG73N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 39mOhm @ 36A, 10V 4V @ 250µA 362 nC @ 10 V ±30V 7700 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG47N60AEF-GE3

SIHG47N60AEF-GE3

MOSFET N-CH 600V 40A TO247AC

Vishay Siliconix
2,740 -

RFQ

SIHG47N60AEF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 23.5A, 10V 4V @ 250µA 189 nC @ 10 V ±30V 3576 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG050N60E-GE3

SIHG050N60E-GE3

MOSFET N-CH 600V 51A TO247AC

Vishay Siliconix
2,478 -

RFQ

SIHG050N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI8823EDB-T2-E1

SI8823EDB-T2-E1

MOSFET P-CH 20V 2.7A 4MICRO FOOT

Vishay Siliconix
3,008 -

RFQ

SI8823EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Tc) 1.5V, 4.5V 95mOhm @ 1A, 4.5V 800mV @ 250µA 10 nC @ 4.5 V ±8V 580 pF @ 10 V - 900mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8821EDB-T2-E1

SI8821EDB-T2-E1

MOSFET P-CH 30V 4MICROFOOT

Vishay Siliconix
3,640 -

RFQ

SI8821EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 2.5V, 4.5V 135mOhm @ 1A, 4.5V 1.3V @ 250µA 17 nC @ 10 V ±12V 440 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3473DDV-T1-GE3

SI3473DDV-T1-GE3

MOSFET P-CHANNEL 12V 8A 6TSOP

Vishay Siliconix
2,024 -

RFQ

SI3473DDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 17.8mOhm @ 8.7A, 4.5V 1V @ 250µA 57 nC @ 8 V ±8V 1975 pF @ 6 V - 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8806DB-T2-E1

SI8806DB-T2-E1

MOSFET N-CH 12V 4MICROFOOT

Vishay Siliconix
3,642 -

RFQ

SI8806DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 2.8A (Ta) 1.8V, 4.5V 43mOhm @ 1A, 4.5V 1V @ 250µA 17 nC @ 8 V ±8V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8489EDB-T2-E1

SI8489EDB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
2,153 -

RFQ

SI8489EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.06A (Ta) 2.5V, 10V 44mOhm @ 1.5A, 10V 1.2V @ 250µA 27 nC @ 10 V ±12V 765 pF @ 10 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA88DP-T1-GE3

SIRA88DP-T1-GE3

MOSFET N-CH 30V 45.5A PPAK SO-8

Vishay Siliconix
2,732 -

RFQ

SIRA88DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 45.5A (Tc) 4.5V, 10V 6.7mOhm @ 10A, 10V 2.4V @ 250µA 12.5 nC @ 4.5 V +20V, -16V 985 pF @ 15 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA84BDP-T1-GE3

SIRA84BDP-T1-GE3

MOSFET N-CH 30V 22A/70A PPAK SO8

Vishay Siliconix
2,145 -

RFQ

SIRA84BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 70A (Tc) 4.5V, 10V 4.6mOhm @ 15A, 10V 2.4V @ 250µA 32 nC @ 10 V +20V, -16V 1050 pF @ 15 V - 3.7W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB422EDK-T1-GE3

SIB422EDK-T1-GE3

MOSFET N-CH 20V 9A PPAK SC75-6

Vishay Siliconix
2,531 -

RFQ

SIB422EDK-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 1.5V, 4.5V 30mOhm @ 5A, 4.5V 1V @ 250µA 18 nC @ 8 V ±8V - - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA477EDJ-T1-GE3

SIA477EDJ-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

Vishay Siliconix
2,220 -

RFQ

SIA477EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 12A (Tc) - 14mOhm @ 7A, 4.5V 1V @ 250µA 87 nC @ 8 V - 2970 pF @ 6 V - - -55°C ~ 150°C (TJ) Surface Mount
SI3407DV-T1-BE3

SI3407DV-T1-BE3

MOSFET P-CH 20V 7.5A/8A 6TSOP

Vishay Siliconix
3,505 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta), 8A (Tc) 2.5V, 4.5V 24mOhm @ 7.5A, 4.5V 1.5V @ 250µA 63 nC @ 10 V ±12V 1670 pF @ 10 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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